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RoHS and WEEE input needed
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5/1/2007   Post a comment
IPC is asking the electronics industry for input on the impact of RoHS and WEEE on their businesses for two studies commissioned by DG Enterprises and Industry of the European Commission.
LG.Philips grabs lead in large-sized LCDs
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5/1/2007   Post a comment
LG.Philips LCD Co. Ltd. in the first quarter fought off a seasonal slowdown, allowing it to surpass AU Optronics Corp. to become the world's leading supplier of large-sized LCD panels in terms of unit shipments, according to iSuppli Corp.
Startup Simberian launches 3D simulation package
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5/1/2007   Post a comment
Startup Simberian, Inc. has released a 3D full-wave transmission line field solver with capabilities to extract via hole parameters.
Mentor, Anite team for baseband chip verification
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5/1/2007   Post a comment
Test and measurement specialist Anite is partnering with EDA group Mentor Graphics Corp. on a complete verification platform that will provide an integrated and efficient set up to verify baseband SoC designs.
REVIEW: All-in-one DC power analyzer sidesteps programming
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5/1/2007   Post a comment
Test-and-measurement house Agilent Technologies debuts a DC power analyzer for sourcing and measuring DC voltage and current into a device under test. You can use it to gain insight into a DUT's power demand in minutes, without writing a single line of code. eeProductCenter Senior Tech Editor Alex Mendelsohn reports.
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What are the engineering and design challenges in creating successful IoT devices? These devices are usually small, resource-constrained electronics designed to sense, collect, send, and/or interpret data. Some of the devices need to be smart enough to act upon data in real time, 24/7. Specifically the guests will discuss sensors, security, and lessons from IoT deployments.

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4:48:30 PM
michigan0 Sang Kim First, 28nm bulk is in volume manufacturing for several years by the major semiconductor companies but not 28nm FDSOI today yet. Why not? Simply because unlike 28nm bulk the LDD(Lightly Doped Drain) to minimize hot carrier generation can't be implemented in 28nm FDSOI. Furthermore, hot carrier reliability becomes worse with scaling, That is the major reason why 28nm FDSOI is not manufacturable today and will not be. Second, how can you suppress the leakage currents from such ultra short 7nm due to the short channel effects? How thin SOI thickness is required to prevent punch-through of un-dopped 7nm FDSOI? Possibly less than 4nm. Depositing such an ultra thin film less then 4nm filum uniformly and reliably over 12" wafers at the manufacturing line is extremely difficult or not even manufacturable. If not manufacturable, the 7nm FDSOI debate is over!Third, what happens when hot carriers are generated near the drain at normal operation of 7nm FDSOI? Electrons go to the positively biased drain with no harm but where the holes to go? The holes can't go to the substrate because of the thin BOX layer. Some holes may become trapped at the BOX layer causing Vt shift. However, the vast majority of holes drift through the the un-dopped SOI channel toward the N+Source,...
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