MIPS chairman appointed interim CEO News & Analysis 12/31/2009 Post a comment MIPS Technologies said its board of directors has appointed the company's chairman to act as interim CEO following the scheduled retirement of longtime president and CEO John Bourgoin.
South Korea closes NAND antitrust probe News & Analysis 12/30/2009 Post a comment South Korea's Fair Trade Commission has closed a three-year investigation of NAND flash memory chip makers, saying it found no evidence that they were engaged in international price fixing, according to reports.
Analysis: To-do list for the next MIPS CEO News & Analysis 12/30/2009 2 comments As John Bourgoin, president and CEO at MIPS, retires on this Thursday, his successor will find plenty on his plate. The new chief's to-do list includes: defending its turf against ARM; further proliferating its cores in new markets; and re-energizing the company as a new offensive player in the IP processor market.
ITC issues final determination against Tessera News & Analysis 12/30/2009 Post a comment The U.S. International Trade Commission issued a final determination that Tessera Technologies failed to prove that its patents were infringed by some DRAM manufacturers and sellers, including Elpida Memory, Nanya Technology, Powerchip Semiconductor and ProMOS Technologies.
Broadcom settles stock options suit for $160M News & Analysis 12/29/2009 Post a comment Fabless chip vendor Broadcom said it has agreed in principle to settle the securities class action litigation pending against the company and some of its current and former officers and directors for $160.5 million in cash.
Company cranks portable wireless audio at CES News & Analysis 12/29/2009 Post a comment Eleven Engineering Inc. will jump into the pool of providers of wireless audio streaming technology at the Consumer Electronics Show with a set of dongles and speakers using its proprietary 2.4 GHz technology.
Taiwanese solar cell maker to buy GE Energy plant News & Analysis 12/29/2009 Post a comment Motech Industries, the Taiwan-based solar cell manufacturer that is 20 percent owned by chip foundry TSMC, said it signed an agreement to acquire GE Energy's Delaware solar module assembly operation. Financial terms of the deal were not disclosed.
Germany launches national OLED research project News & Analysis 12/29/2009 1 comment Germany's BMBF (Federal Ministry of Education and Research) is providing support for a 14.7 million euro (about $21 million) project called So-Light, intended to accelerate the application of organic light emitting diodes (OLEDs) for lighting and signage.
The 10 most popular stories of 2009 News & Analysis 12/29/2009 Post a comment Here are the top ten stories for 2009 as ranked by EE Times readers, up to and including Tuesday, Dec. 29. The ranking is based on the number of reader "views" or "hits" on a particular article.
TSMC surpasses '09 capex estimate News & Analysis 12/28/2009 Post a comment Foundry giant TSMC appears all but certain to eclipse its most recent estimate for 2009 capital spending, thanks to an eye-popping $1.24 billion spent on equipment buys in December alone.
Analyst: Impact of FTC versus Intel overblown News & Analysis 12/28/2009 Post a comment The final impact of a suit brought by the U.S. Federal Trade Commission against Intel is likely to be less than what many expect, according to a Wall Street analyst, who rejected the notion that the courts would force the microprocessor giant to license modern x86 instruction sets to other firms.
Broadlight, Ralink team on home gateway reference News & Analysis 12/28/2009 Post a comment BroadLight Inc. (Santa Clara, Calif.), a supplier of software and silicon for gigabit passive optical networks (GPONs), has announced the integration of BroadLight's BL2348 residential gateway IC with the RT3062 300-Mbps 802.11n Wi-Fi chip from Ralink Technology Corp. (Hsinchu Taiwan).
Taiwan set to outspend Samsung on DRAM capex, says analyst News & Analysis 12/28/2009 Post a comment Inotera Memories Inc. will triple its capital expenditure in 2010 to $1,385 billion as part of an effort by Taiwan DRAM manufacturers that will, in aggregate, eclipse the spending of market leader Samsung Electronics Co. Ltd., according to DRAMexchange Technology Inc., a Taiwan-based market analysis company.
DRAM capex set to rise 80% in 2010, says analyst News & Analysis 12/28/2009 Post a comment Capital expenditure by DRAM makers will increase by 80 percent year-on-year to $7.85 billion in 2010, according to DRAMexchange Technology Inc., a Taiwan-based market analysis company. The company estimated the DRAM makers will spend $4.30 billion in 2009.
Hynix confirms 2010 capex increase News & Analysis 12/24/2009 Post a comment South Korean memory chip vendor Hynix Semiconductor has confirmed that it will increase its planned capital expenditure for 2010 to 2.3 trillion won (about $1.95 billion), according to reports, which cite a filing made by Hynix with the South Korea Stock Exchange.
Incomplete 3DTV products in CES spotlight News & Analysis 12/23/2009 1 comment The HDMI standard is getting an update to support broadcast stereo 3D content on new and existing links, one of many pieces of the puzzle still being put in place for the roll pout of 3DTV which will be a major focus at the Consumer Electronics Show.
Micron results: What analysts are saying News & Analysis 12/23/2009 1 comment Memory chip vendor Micron Technology Inc. recorded its first profit in three years during the period ended Dec. 3, topping Wall Street's expectations with sales of $1.74 billion.
Global sales were strong in November, says analyst News & Analysis 12/23/2009 Post a comment Global chip sales in November were strong according to analysts at Carnegie Group (Oslo, Norway). The average of September, October and November chip sales is expected to be reported as $22.5 billion versus $21.7 billion for the equivalent figure in October.
Nano vacuum tubes could make better batteries, or memories News & Analysis 12/23/2009 2 comments Researchers at the University of Illinois at Urbana-Champaign, reckon the vacuum tube could be basis of a high energy density battery, or a non-volatile memory. In theory arrays of nanometer-scale vacuum tubes should be able to achieve three times the energy density of lithium-ion batteries.