IEDM Set to Stage FinFET vs. FDSOI News & Analysis 9/27/2013 28 comments The leading-edge of semiconductor technology becomes more complex, and IEDM is there to bear witness -- and stage FinFET versus FDSOI, the battle for sub-20nm semiconductors.
Stretchable OLEDs for Displays, Lighting News & Analysis 9/27/2013 24 comments University of California at Los Angeles (UCLA) researchers fabricate a flexible, stretchable, bendable organic light-emitting diode (OLED) display that continues working while being deformed.
Freescale, Micron Extend Memory Research News & Analysis 9/24/2013 2 comments Freescale Semiconductor and Micron Technology have extended separate memory research partnerships in attempts to add to their capabilities at the leading-edge of chip production and find technology that can scale beyond the limits of NAND flash memory.
New York Plans $45 Billion Fab Campus News & Analysis 9/20/2013 23 comments The College of Nanoscale Science and Engineering is filing plans to develop an upstate New York site that could accommodate up to three 450mm wafer fabs at an estimated cost of up to $45 billion.
Soft Mobile Market Hits Chip Capex News & Analysis 9/20/2013 2 comments Capital spending forecasts have been reduced in the short term, affecting 2013 totals, due to perceived softness in the smartphone and tablet computer markets. However, a more favorable general economy is prompting a better outlook for 2014 and 2015.
Superconducting Quantum Computer Beckons News & Analysis 9/20/2013 11 comments Lawrence Berkeley National Laboratory (Berkeley Lab) has reported the first demonstration of high-temperature superconductivity in the surface of a topological insulator--a promising material for quantum computers whose bulk properties are that of an insulator, but whose surface is a conductor.
Spintronics for Silicon Approaching News & Analysis 9/19/2013 3 comments New room-temperature silicon-compatible semiconductor discovered by researchers may pave the way for future chips that store information on magnetic spin of electrons.
IMEC Process Supports Germanium-Tin Transistors News & Analysis 9/18/2013 2 comments A Belgo-Japanese research team has developed an improved process for the integration of germanium-tin MOSFETs on silicon substrates. This opens up the possibility of strained GeSn pMOSFETs at sub-10 nm geometries.
True White LEDs on the Horizon News & Analysis 9/17/2013 12 comments Physicist Z. Valy Vardeny and his colleagues at the University of Utah inserted platinum atoms into an organic semiconductor to tune its light emission to different colors in the quest for emitting truly white light to replace future light bulbs.
Plastic Memory Firm Plans Pilot Line News & Analysis 9/17/2013 5 comments Thin Film, a developer of organic ferroelectric nonvolatile memory technology, has ordered equipment for a pilot production line in Linkoping, Sweden, and announced a plan to raise about US$23 million via the sale of shares.
As data rates begin to move beyond 25 Gbps channels, new problems arise. Getting to 50 Gbps channels might not be possible with the traditional NRZ (2-level) signaling. PAM4 lets data rates double with only a small increase in channel bandwidth by sending two bits per symbol. But, it brings new measurement and analysis problems. Signal integrity sage Ransom Stephens will explain how PAM4 differs from NRZ and what to expect in design, measurement, and signal analysis.
January 2016 Cartoon Caption ContestBob's punishment for missing his deadline was to be tied to his chair tantalizingly close to a disconnected cable, with one hand superglued to his desk and another to his chin, while the pages from his wall calendar were slowly torn away.122 comments