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posted in April 1999
A simple route to dc power-rail loads
News & Analysis  
4/27/1999   Post a comment
A hot-swap power manager (HSPM) can be used to design a simple, programmable, constant-current electronic load for 3-V to 5-Vdc power rails. Ordinarily, maximum current capability is limited to 2.7 A for this part type, but higher currents can be obtained using external n-channel MOSFETs. The current would then be limited only by the safe operating area of the FET. An undervoltage lock-out trigger on the Unitrode UCC3919 prevents operation when the input power rail is below 2.75 V.
DSP frameworks send voice over IP
News & Analysis  
4/27/1999   Post a comment
Voice-over-Internet-Protocol (VoIP) is the recognized industry term to categorize the array of telecommunications equipment and services that are stimulating the transition from traditional circuit-switched to packet-data-based equipment networks. The technology changes required with the shift from the transport of packet data over voice networks to the transport of voice and fax over packet-data networks is providing a major market for programmable DSPs and the associated software infrastructur
W-CDMA enables 3G cellular design
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4/27/1999   Post a comment
Wideband code-division multiple-access (W-CDMA) is emerging as one of the main technologies for the implementation of third-generation (3G) cellular systems. The complexity of W-CDMA systems can be viewed from different angles: the complexity of each single algorithm, the complexity of the overall system and the sheer computational complexity of a receiver.
Oversampled data simplifies design
News & Analysis  
4/27/1999   Post a comment
Multirate signal processing is an enabling technology that brings DSP techniques to applications that require lower cost and higher sample rates. While many of the techniques have been known for more than 25 year, others have a much shorter lineage. Recent activity such as the introduction of signal-processing chip sets and design tools directed to multirate applications reflects a growing awareness of the technology. However, using multirate solutions requires a slight shift in the system desig
DSP schemes navigate multimedia reality
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4/27/1999   Post a comment
Digital audio processing is the key to "full employment" for engineers. That's according to Tomlinson Holman, the inventor of Lucasfilm Ltd.'s THX theater sound and the keynote speaker at DSP World Spring Conference this week (April 26-28) at the Santa Clara Convention Center, Santa Clara, Calif. Holman argues that Dolby digital-5.1 speaker surround sound-is really not powerful enough to convey the realism of a dramatic situation on film or in a concert hall. The 5.1 topology, with left front, c


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What are the engineering and design challenges in creating successful IoT devices? These devices are usually small, resource-constrained electronics designed to sense, collect, send, and/or interpret data. Some of the devices need to be smart enough to act upon data in real time, 24/7. Specifically the guests will discuss sensors, security, and lessons from IoT deployments.

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michigan0 Sang Kim First, 28nm bulk is in volume manufacturing for several years by the major semiconductor companies but not 28nm FDSOI today yet. Why not? Simply because unlike 28nm bulk the LDD(Lightly Doped Drain) to minimize hot carrier generation can't be implemented in 28nm FDSOI. Furthermore, hot carrier reliability becomes worse with scaling, That is the major reason why 28nm FDSOI is not manufacturable today and will not be. Second, how can you suppress the leakage currents from such ultra short 7nm due to the short channel effects? How thin SOI thickness is required to prevent punch-through of un-dopped 7nm FDSOI? Possibly less than 4nm. Depositing such an ultra thin film less then 4nm filum uniformly and reliably over 12" wafers at the manufacturing line is extremely difficult or not even manufacturable. If not manufacturable, the 7nm FDSOI debate is over!Third, what happens when hot carriers are generated near the drain at normal operation of 7nm FDSOI? Electrons go to the positively biased drain with no harm but where the holes to go? The holes can't go to the substrate because of the thin BOX layer. Some holes may become trapped at the BOX layer causing Vt shift. However, the vast majority of holes drift through the the un-dopped SOI channel toward the N+Source,...
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