Electronica: Micron memory to skip a node News & Analysis 11/15/2012 3 comments Micron Technology is looking at a so-called 2X-nm process manufacturing node for its next generation of phase-change memory. This will be a production node at roughly the same minimum geometry that Micron is investigating for the introduction of vertical-NAND flash memory.
NAND storage firm raises cash News & Analysis 11/9/2012 Post a comment Diablo Technologies, a fabless chip company that supplies memory controllers and interconnect devices for memory subsystems based on NAND flash storage, said it has closed a $28 million funding round.
IMEC backs carbon nanotube memory News & Analysis 11/1/2012 6 comments Belgian microelectronics research center IMEC has announced a joint development program with Nantero Inc. to make carbon nanotube non-volatile memories with critical dimensions of less than 20-nm.
What are the engineering and design challenges in creating successful IoT devices? These devices are usually small, resource-constrained electronics designed to sense, collect, send, and/or interpret data. Some of the devices need to be smart enough to act upon data in real time, 24/7. Specifically the guests will discuss sensors, security, and lessons from IoT deployments.