Intel launches solid-state drive Product News 12/30/2010 26 comments Intel Corp. has introduced to the market a solid-state drive (SSD) that offers 40- and 80-Gbyte memory capacity in a format measuring 51-mm by 30-mm and only 5-mm deep. The unit weighs 10 grams.
Intel shrinks SSD drive Product News 12/30/2010 3 comments Intel Corporation has released the Intel® solid-state drive 310 Series, a solid-state drive (SSD) with Intel® X25-class SSD performance that measures 51mm-by-30mm and 5mm thick.
Allocating dynamic memory with confidence Design How-To 12/27/2010 3 comments Storing, organizing, and sharing data makes up a large part of the memory requirements for an application. A device application can use an embedded database library to manage memory more effectively, by both imposing bounds on memory usage and analyzing worst-case behavior in a consistent way.
Cypress fleshes out 65nm SRAM family Product News 12/27/2010 1 comment Cypress Semiconductor reports that new devices deliver industry’s fastest QDR SRAM operating speed of 550 MHz while reducing power consumption by 50 percent.
Hynix CEO warns of weak pricing: report News & Analysis 12/20/2010 Post a comment The CEO of Hynix Semiconductor Inc. has warned that memory chip prices are likely to continue to fall in the first quarter of 2011 and will impact his company's fourth quarter sales and profits, according to a Wall Street Journal report.
IMFT Singapore NAND fab set to start 2Q11 News & Analysis 12/17/2010 9 comments IM Flash Technologies LLC, a joint venture between Intel Corp. and Micron Technologies Inc. that makes NAND flash memoy, is preparing its delayed wafer fab in Singapore and expects to commence commercial production in the second quarter of 2011, according to online reports.
ST's LRiS64K high-density RFID memory simplifies, speeds maintenance of equipment Product News 12/15/2010 Post a comment The LRiS64K from STMicroelectronics is a high-density RFID device that allows technical equipment to 'talk back,' providing detailed information to speed up servicing and simplify record keeping for OEMs and equipment operators. The new chip combines radio tagging (RFID) circuitry with a large 64-Kbit non-volatile EEPROM capable of storing extensive data, such as initial manufacturer details and complete records of repairs or upgrades.
Reports: Toshiba fab outage to hit NAND supply News & Analysis 12/9/2010 4 comments Flash memory vendor Toshiba has said that a power outage at one of its wafer fabs could curtail its NAND flash memory shipments by up to 20 percent in January and February of 2011, according to reports.
Patent firm pursues DRAM, FPGA companies News & Analysis 12/8/2010 13 comments Intellectual Ventures Management LLC, a patent holder and administration group founded by Nathan Myhrvold, a former CTO of Microsoft Corp., has taken action on multiple fronts alleging patent infringement. In semiconductor industry the firm is pursuing two memory chip makers and three FPGA vendors.
TSVs help Samsung cut DRAM power by 40% News & Analysis 12/7/2010 9 comments Samsung Electronics Co. Ltd. has announced an 8-Gbyte registered dual-inline memory module (RDIMM) with through-silicon-via (TSV) die-stacking that it claims saves 40 percent of the power consumption of a conventional RDIMM.
Qimonda administrator sues Infineon News & Analysis 12/2/2010 Post a comment The insolvency administrator dealing with the bankruptcy estate of Qimonda AG, Michael Jaffe, has filed an action in the District Court Munich against its parent company, chipmaker Infineon Technologies AG, seeking an unspecified amount of money for the estate.
What are the engineering and design challenges in creating successful IoT devices? These devices are usually small, resource-constrained electronics designed to sense, collect, send, and/or interpret data. Some of the devices need to be smart enough to act upon data in real time, 24/7. Specifically the guests will discuss sensors, security, and lessons from IoT deployments.