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posted in December 2011
Top 10 automotive electronics stories of 2011
Design How-To  
12/23/2011   3 comments
The top stories of the year underscore the great interest Automotive Designline readers have in hybrid and electric vehicles.
Flash memory rights protection, or protectionist?
12/21/2011   9 comments
When five companies band together to push a new standard for digital rights managment it begs questions about whose flash memories will get designed into equipment.
Seagate completes purchase of Samsung HDD business
News & Analysis  
12/20/2011   2 comments
Technology plc has completed the acquisition of the hard disk drive business of Samsung Electronics Co. Ltd.
Five announce flash memory security initiative
News & Analysis  
12/19/2011   3 comments
Panasonic, Samsung, SanDisk, Sony and Toshiba have reached an agreement in principle to collaborate on a content protection technology for flash memory cards such as SD Cards and for other flash-based storage options.
Critical Area Analysis and Memory Redundancy
Design How-To  
12/19/2011   Post a comment
Whether you are fabless, fab-lite, or IDM, the goal of reducing a design’s sensitivity to manufacturing issues should ideally be handled by the design teams…
SandForce SSD processor targets cloud computing
Product News  
12/18/2011   Post a comment
The SF-2481 SSD increases the endurance of SSDs built with standard MLC flash by incorporating nearly twice the normal error correction strength.
Single event effects (SEEs) in FPGAs, ASICs, and processors, part I: impact and analysis
Design How-To  
12/14/2011   1 comment
As dimensions shrink to below 90 nm, SEEs impact all electronics, including ASICs and FPGAs with faults ranging from logical errors to changes in data to latchups.
STEC claims highest-endurance SSD
Product News  
12/14/2011   Post a comment
The company extends Its ZeusIOPS® SSD family and lays claim to the industry’s highest endurance MLC flash-based SSD for the data center
Report: Apple in talks to buy flash memory firm
News & Analysis  
12/13/2011   11 comments
PC and consumer goods firm Apple is in talks to buy startup Anobit Ltd. and is prepared to pay between $400 million and $500 million, according to a report in a Hebrew publication called Calcalist.
Crocus signs SMIC to make magnetic memory
News & Analysis  
12/9/2011   Post a comment
Crocus Technology Inc., a vendor of magnetic RAMs, has signed a technology development and wafer manufacturing agreement with Semiconductor Manufacturing International Corp., China's most advanced semiconductor foundry.
IEDM: IMEC reports 10-nm RRAM cell
12/8/2011   3 comments
European research institute IMEC has reported a Resistive RAM memory cell that measures 10-nm by 10-nm at the International Electron Devices Meeting. The organization claims this is the smallest such cell and that it shows the potential to replace NAND flash memory.
IEDM: Sony game exec lays out chip needs
News & Analysis  
12/6/2011   3 comments
The CTO of Sony Computer Entertainment told chip makers he needs better image and motion sensor technologies in order to achieve the "ultimate immersive system."
Top ten articles on memory for 2011
Design How-To  
12/6/2011   3 comments
You voted with your page views, and here are the top 10 technical articles and top 10 products from the Memory Designline that you selected this year.
Intel, Micron offer 128-Gbit NAND flash memory
Product News  
12/6/2011   7 comments
Intel Corp. and Micron Technology Inc. have announced the development of a 128-Gbit NAND flash memory made using a 20-nm manufacturing process technology.
EE Times' 20 hot technologies for 2012
12/6/2011   57 comments
What follows is a list of 20 technologies EE Times editors think can bring big changes, and that we will be tracking in 2012.
EE Times' 20 hot technologies for 2012
12/6/2011   57 comments
What follows is a list of 20 technologies EE Times editors think can bring big changes, and that we will be tracking in 2012.
EE Times' 20 hot technologies for 2012
12/6/2011   57 comments
What follows is a list of 20 technologies EE Times editors think can bring big changes, and that we will be tracking in 2012.
Samsung plans China NAND flash wafer fab
News & Analysis  
12/6/2011   1 comment
Samsung Electronics Co. Ltd., has said it is seeking permission to build a NAND flash memory wafer fab in China and get it running in 2013, according to local reports.

As data rates begin to move beyond 25 Gbps channels, new problems arise. Getting to 50 Gbps channels might not be possible with the traditional NRZ (2-level) signaling. PAM4 lets data rates double with only a small increase in channel bandwidth by sending two bits per symbol. But, it brings new measurement and analysis problems. Signal integrity sage Ransom Stephens will explain how PAM4 differs from NRZ and what to expect in design, measurement, and signal analysis.

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