Five announce flash memory security initiative News & Analysis 12/19/2011 3 comments Panasonic, Samsung, SanDisk, Sony and Toshiba have reached an agreement in principle to collaborate on a content protection technology for flash memory cards such as SD Cards and for other flash-based storage options.
Crocus signs SMIC to make magnetic memory News & Analysis 12/9/2011 Post a comment Crocus Technology Inc., a vendor of magnetic RAMs, has signed a technology development and wafer manufacturing agreement with Semiconductor Manufacturing International Corp., China's most advanced semiconductor foundry.
IEDM: IMEC reports 10-nm RRAM cell Research 12/8/2011 3 comments European research institute IMEC has reported a Resistive RAM memory cell that measures 10-nm by 10-nm at the International Electron Devices Meeting. The organization claims this is the smallest such cell and that it shows the potential to replace NAND flash memory.
As data rates begin to move beyond 25 Gbps channels, new problems arise. Getting to 50 Gbps channels might not be possible with the traditional NRZ (2-level) signaling. PAM4 lets data rates double with only a small increase in channel bandwidth by sending two bits per symbol. But, it brings new measurement and analysis problems. Signal integrity sage Ransom Stephens will explain how PAM4 differs from NRZ and what to expect in design, measurement, and signal analysis.
January 2016 Cartoon Caption ContestBob's punishment for missing his deadline was to be tied to his chair tantalizingly close to a disconnected cable, with one hand superglued to his desk and another to his chin, while the pages from his wall calendar were slowly torn away.122 comments