Does memory need more respect? Memory Designline Blog 2/27/2012 1 comment Like offensive linemen, memory performs an essential task but (like offensive linemen) it often only attracts attention when it fails.
Genusion licenses B4-Flash to Rohm, Lapis News & Analysis 2/23/2012 3 comments Genusion Ltd., a fabless Japanese memory IP company, has announced that is has licensed its B4-flash non-volatile memory technology to Rohm Group and Rohm subsidiary Lapis Semiconductor Co. Ltd.
Job ad discloses SanDisk resistive RAM program News & Analysis 2/20/2012 16 comments Flash memory vendor SanDisk is looking for a director of processing engineering management for a 3-D resistive RAM team based in Milpitas. A job ad for the position was posted in SanDisk's website dated Feb. 15, 2012.
SanDisk launches SSD memory for PCs Product News 2/15/2012 12 comments SanDisk Corp. has announced the X100 solid-state drive (SSD) for use in desktop, notebook and thin laptop computers. The unit is available in capacities up to 512-Gbyte and comes with a 6-Gbyte per second SATA interface and it comes in a 2.5-inches form-factor but at only 9.5-mm or 7-mm deep.
MRAM startup raises $36 million VC fund News & Analysis 2/15/2012 3 comments Spin Transfer Technologies Inc., a startup pursing the development of a type of magnetic random access memory, has raised $36 million in a series A funding round led by Allied Minds Inc. and Invesco Asset Management.
Qimonda admin hits Infineon with $2.25 billion demand News & Analysis 2/15/2012 2 comments The insolvency administrator of Qimonda AG, the former DRAM-making subsidiary of chipmaker Infineon Technologies AG (Munich, Germany), has filed a request for payment of at least 1.71 billion euro (about $2.25 billion) in a lawsuit pending in a Munich District Court.
Memristor brouhaha redux Social Mania 2/14/2012 14 comments A battle of mathematical papers has broken out at arXiv.org on the topic of the memristor, which may be part of the future of non-volatile memory devices.
PCM Progress Report No. 6: Afterthoughts Design How-To 2/13/2012 12 comments Phase change memory (PCM) faces real issues in scaling to the 20-nm node and beyond, but innovative structures and materials may help the technology fight off the flash memory challenge.
Micron launches lower power DDR3 DRAM Product News 2/10/2012 1 comment Memory chipmaker Micron Technology Inc. (Boise, Idaho) has launched a lower power version of the DDR3 type of DRAM under the label DDR3Lm with 2- and 4-Gbit capacity memories.
Challenges of testing mobile memories Design How-To 2/8/2012 1 comment I recently spoke with Cecil Ho, President of CST, about the challenges of testing mobile memories, and he gave me his perspective from his vantage point at CST.
Plextor SSD offers high performance Product News 2/1/2012 Post a comment Plextor has released its M3 Pro Series solid state drive (SSD) with enhanced sequential and random read/write speeds and with features such as 24nm Toggle Flash and firmware updates.
As data rates begin to move beyond 25 Gbps channels, new problems arise. Getting to 50 Gbps channels might not be possible with the traditional NRZ (2-level) signaling. PAM4 lets data rates double with only a small increase in channel bandwidth by sending two bits per symbol. But, it brings new measurement and analysis problems. Signal integrity sage Ransom Stephens will explain how PAM4 differs from NRZ and what to expect in design, measurement, and signal analysis.
January 2016 Cartoon Caption ContestBob's punishment for missing his deadline was to be tied to his chair tantalizingly close to a disconnected cable, with one hand superglued to his desk and another to his chin, while the pages from his wall calendar were slowly torn away.122 comments