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Content tagged with Memory/Storage
posted in February 2013
The storage tipping point is upon us
2/27/2013   10 comments
Keeping pace with the onslaught of Big Data requires a revolutionary approach to storage.
Toshiba samples 64-GB universal flash storage
Product News  
2/26/2013   Post a comment
The JEDEC-compliant interface handles essential writing block management, error correction and driver software.
OCZ unveils SSD with 20-nm flash
Product News  
2/26/2013   Post a comment
The 6 Gb/s SATA III-based MLC drive will come in 220-GB and 240-GB capacities.
Voltage-controlled MRAM: Status, challenges and prospects
Design How-To  
2/25/2013   1 comment
Magnetoelectric random access memory (MeRAM) devices may complement or eventually replace spin transfer torque to achieve improved memory capacities and lower cost per bit.
Dual layer helps ReRAM reach mainstream capacity
Design How-To  
2/25/2013   4 comments
Metal-oxide resistive RAM has reached close to the mainstream for array size with a two-layer, 32-Gbit nonvolatile memory prototype.
Toshiba tweak reduces SRAM standby power by 85%
Design How-To  
2/22/2013   2 comments
Japanese memory maker has developed a technique that could save power consumption in processors with embedded SRAM for applications such as smartphones.
Yoshida in NY: Sony snaps out of NIH syndrome
2/22/2013   9 comments
For years Sony believed in the myth that the instinct to develop proprietary technologies or formats is deeply ingrained in the company’s DNA.
Billion-dollar business seen for MRAM, PCM
Design How-To  
2/20/2013   11 comments
Five application areas are going to drive strong market growth for four emerging nonvolatile memory technologies, according to market research firm Yole.
Slideshow: Google updates fiber offer
News & Analysis  
2/18/2013   5 comments
Milo Medin, former cable Internet entrepreneur and head of the Google Fiber program, gave engineers an update on the search giant's progress testing the waters as a carrier.
Memory 101: What you need to know about FRAM, part 2
Design How-To  
2/15/2013   Post a comment
Understand charge thresholds, bit line capacitance ratios, and why retention is a bigger problem than fatigue.
Micron launches dense 128-Gbit NAND flash
Design How-To  
2/15/2013   8 comments
Micron has already started sampling its 20-nm, 128-Gbit NAND flash memory made with triple-level cells ahead of an ISSCC presentation scheduled for Feb. 19, 2013.
Memory 101: What you need to know about FRAM, part 1
Design How-To  
2/12/2013   Post a comment
Learn how hysteresis provides the fundamental mechanism of ferroelectric RAM.
Microchip expands SPI flash family
Product News  
2/11/2013   Post a comment
Three devices operate between 2.3 V and 3.6 V.
Yoshida in Japan: ‘Quality’ quest without balance
2/11/2013   16 comments
The tendency of Japanese companies to overbuild over-specified, high-quality products is one culprit behind the downfall of the nations electronics industry.
Toshiba develops zero wait state flash memory for 100MHz ARM microcontrollers
Product News  
2/7/2013   Post a comment
Toshiba has developed a new generation of its high speed flash memory to provide zero-wait state performance at 100MHz for its ARM-based embedded microcontrollers.
DesignCon 2013: Confronting signal integrity problems with LPDDR3.
Design How-To  
2/4/2013   Post a comment
How do you maintain signal and power integrity in that kind of high-speed, noisy environment?
Highly scalable vertical gate 3-D NAND
Design How-To  
2/4/2013   4 comments
New layout twists even/odd bit lines (BLs) in the opposite direction to improve manufacturability, while staircase BL contacts reduce costs.
SK Hynix overtakes Micron in NAND flash ranking
Design How-To  
2/4/2013   3 comments
The market for NAND flash ticked up in the fourth quarter with Toshiba, SK Hynix and Intel gaining market share at the expense of Samsung and Micron.

Autonomous vehicles on our roads soon? What could go wrong with that? Listen in as EE Times' Junko Yoshida asks industry experts what the intended and unintended consequences will be.
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