NAND flash market surged in Q4 Design How-To 3/28/2013 3 comments Strong pricing was one of the reasons behind an unusual and unseasonal jump in the value of the he NAND flash memory market in 4Q12, according to market researcher IHS.
NIST demos quantum MEMS Blog 3/15/2013 Post a comment The National Institute of Standards and Technology has demonstrated a MEMS delay-line memory for temporary scratchpad storage in future quantum computers.
Memory prices on the rise Design How-To 3/7/2013 4 comments Cuts in capital expenditure amongst a diminishing cadre of memory makers are driving NAND and DRAM average selling prices upwards.
Memory markets gain steam Blog 3/5/2013 Post a comment Shortages, production reallocations and a changing cast of characters boosts contract pricing for NAND flash, mobile DRAM and another market that might surprise you.
As data rates begin to move beyond 25 Gbps channels, new problems arise. Getting to 50 Gbps channels might not be possible with the traditional NRZ (2-level) signaling. PAM4 lets data rates double with only a small increase in channel bandwidth by sending two bits per symbol. But, it brings new measurement and analysis problems. Signal integrity sage Ransom Stephens will explain how PAM4 differs from NRZ and what to expect in design, measurement, and signal analysis.
January 2016 Cartoon Caption ContestBob's punishment for missing his deadline was to be tied to his chair tantalizingly close to a disconnected cable, with one hand superglued to his desk and another to his chin, while the pages from his wall calendar were slowly torn away.122 comments