Embedded Systems Conference
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Content tagged with Memory/Storage
posted in March 2013
Silicon Valley Nation: Memoir's CEO shift, new direction
Blog  
3/29/2013   3 comments
Memoir Systems has replaced its CEO with founder Sundar Iyer and charted a new course.
NAND flash market surged in Q4
Design How-To  
3/28/2013   3 comments
Strong pricing was one of the reasons behind an unusual and unseasonal jump in the value of the he NAND flash memory market in 4Q12, according to market researcher IHS.
Fujitsu releases 1-Mb, 2-Mb FRAM
Product News  
3/25/2013   1 comment
Featuring an SPI serial interface, the products guarantee 10 trillion read/write cycles.
Cheap mixed-signal ASIC as easy as FPGA
Blog  
3/25/2013   1 comment
How will you make that complex analog/digital circuit in volume?
Dynamic partitioning speeds memory characterization
Design How-To  
3/25/2013   Post a comment
Method delivers precise, comprehensive models for design, verification and analysis.
Micron's sales rise but losses continue
Design How-To  
3/22/2013   11 comments
Memory maker's $286 million loss attributed, in part, to losses on currency hedging and the sale of a wafer fab in Italy.
Microsemi designs flash memory for operation under extreme conditions
Product News  
3/21/2013   Post a comment
Microsemi has released high-temperature flash memory products that withstand environmental challenges of deeper oil and gas drilling.
Exclusive: SMIC's CEO makes utilization first focus
News & Analysis  
3/21/2013   4 comments
SMIC CEO Tzu-Yin Chiu hopes to put to bed the industry’s image of the Chinese foundry as hip-deep in red ink and fighting TSMC in court.
Chinese foundry gets makeover, new ID
Design How-To  
3/19/2013   4 comments
Newly minted XMC, formerly Wuhan Xinxin, is not another not-so-successful foundry using hand-me-down tools located in the middle of nowhere.
Tech Beat: Nano-structures promise power-sipping PCM
Blog  
3/19/2013   4 comments
Self-assembling oxide layer patterns smaller electrodes to cut power demand by a factor of 20.
MIEC-based access devices go fast, small and 3-D
Design How-To  
3/18/2013   Post a comment
Well-suited for next-gen NVM like phase-change memory and resistive RAM, ADs deliver blistering speeds with no CD lower bound in sight.
NIST demos quantum MEMS
Blog  
3/15/2013   Post a comment
The National Institute of Standards and Technology has demonstrated a MEMS delay-line memory for temporary scratchpad storage in future quantum computers.
What Facebook really needs from the memory sector
Blog  
3/12/2013   2 comments
Facebook’s VP of engineering Jay Parikh on storing 350 million images per day, the need for speed and the product he's waiting to buy.
Greenliant unveils industrial-temp SSDs
Product News  
3/11/2013   Post a comment
The SATA and PATA embedded drives use MLC NAND flash memory.
Memory prices on the rise
Design How-To  
3/7/2013   4 comments
Cuts in capital expenditure amongst a diminishing cadre of memory makers are driving NAND and DRAM average selling prices upwards.
Memory markets gain steam
Blog  
3/5/2013   Post a comment
Shortages, production reallocations and a changing cast of characters boosts contract pricing for NAND flash, mobile DRAM and another market that might surprise you.
Designing the Tehuti Networks 10GbE controller
Design How-To  
3/5/2013   Post a comment
The company's new 10GbE controller, the TN4010, integrates an 8kb OTP NVM from Kilopass Technology Inc.
Segmented, lockable memory enhances 10GbE controller flexibility
Design How-To  
3/5/2013   Post a comment
Storing media access control (MAC) address on-chip minimizes cost, bill of materials and power demands for network interface card (NIC) and LAN on motherboard (LOM) manufacturers.
Micron rolls out SAS SSD
Product News  
3/4/2013   Post a comment
The 6 Gb/s device achieves 10 drive fills per day for five years.
Everspin unveils 1-Mb MRAM with Quad SPI interface
Product News  
3/4/2013   Post a comment
Memory features a 104-MHz clock speed with a 52 MB/s read/write bandwidth.


Radio
LATEST ARCHIVED BROADCAST
As data rates begin to move beyond 25 Gbps channels, new problems arise. Getting to 50 Gbps channels might not be possible with the traditional NRZ (2-level) signaling. PAM4 lets data rates double with only a small increase in channel bandwidth by sending two bits per symbol. But, it brings new measurement and analysis problems. Signal integrity sage Ransom Stephens will explain how PAM4 differs from NRZ and what to expect in design, measurement, and signal analysis.

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