Embedded Systems Conference
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Content tagged with Memory/Storage
posted in April 2012
Embedded TLC flash controller targets smart phones, tablets
Product News  
4/30/2012   Post a comment
DensBits’ DB3610 offers more than 10,000 P/E cycles on 2Xnm triple-level-cell devices.
New memory packaging IP packs multi-gigabit capacity in a small form factor
Product News  
4/30/2012   Post a comment
Invensas targets notebook and tablet applications with DIMM-in-a-package solution based on xFD Technology.
PCM Progress Report No. 7: A view of Samsung's 8-Gb array
Design How-To  
4/30/2012   3 comments
Our PCM analyst takes a look at the data released on Samsung's 8-Gb array and what it means for the technology.
IDT introduces temperature sensor for SSDs
Product News  
4/23/2012   Post a comment
Device supports 1.8-V power supply for enterprise server and storage applications.
Design calculations for robust I2C communications
Design How-To  
4/23/2012   1 comment
The I2C bus topology relies on correctly sized pull-up resistors for reliable, robust communications.
Intel releases SSD 330 series
Product News  
4/17/2012   Post a comment
The drive’s SATA 6-Gb/s interface provides up to 500 MB/s sequential read speeds and up to 450 MB/s sequential write speeds.
Western Digital unveils 7-mm hard drive
Product News  
4/16/2012   Post a comment
The mobile storage unit offers 500 GB and 320 GB capacities for slim notebooks.
DDR4 interposer supports logic analyzer for memory testing
Product News  
4/16/2012   Post a comment
FuturePlus DD4 interposer couples with Agilent's logic analyzer modules for debugging, testing, and verifying products.
JEDEC prepares to standardize wireless data transfer
Memory Designline Blog  
4/16/2012   1 comment
The standard will give rise to a completely new form factor that combines not just memory but intelligence and an interface.
Memory subsystem validation through real-time compliance test and logic analysis
Design How-To  
4/16/2012   Post a comment
New tools have emerged to shed more light on the source of DRAM errors.
OCZ introduces next-gen SSD platform
Product News  
4/16/2012   Post a comment
The Indilinx Everest 2 delivers 120,000 random IOPS and features flash management capabilities to extend NAND flash life.
Micron, Samsung back JEDEC plan for wireless memory
News & Analysis  
4/13/2012   2 comments
The JEDEC Solid State Technology Association, formerly known as the Joint Electron Devices Engineering Council (JEDEC), has announced that the JC-64 Committee for embedded memory storage and removable memory cards has formed a subcommittee focused on the standardization of non-volatile memory for wireless data transfers.
Microsemi releases SSD with ruggedized SATA connectors
Product News  
4/9/2012   Post a comment
Connectors protect against shock and vibration for defense and industrial applications.
Happy Birthday NAND flash
Memory Designline Blog  
4/9/2012   Post a comment
Twenty-five years ago, NAND flash came to the market, and the personal electronics and computing sectors changed forever.
Pick the right storage solution for each part of the cloud
Design How-To  
4/9/2012   Post a comment
When it comes to storage, the cloud is simplifying complexity while complicating simplicity.
Reports: China's Hony and TPG team to bid for Elpida
News & Analysis  
4/6/2012   2 comments
Chinese investment firm Hony Capital is teaming up with U.S. private equity firm TPG to bid for Elpida Memory Inc., the DRAM maker that filed for bankruptcy protection in February, according to reports.
Memoir announces memory generators for dual and 2 port memories
Product News  
4/4/2012   Post a comment
Memoir Systems has announced its first commercial product family: Renaissance™ 2X…
Mosaid stacks 16 NAND die for solid-state disks
News & Analysis  
4/4/2012   Post a comment
Mosaid, a licensor of memory-related semiconductor intellectual property, has announced that it is now sampling a 16-die stacked NAND flash memory component with a memory capacity of 512-Gbits.
Silicon dioxide nanometal offers alternative ReRAM
4/3/2012   13 comments
Researchers at the University of Pennsylvania, led by Professor I-Wei Chen, have developed a resistive-switching memory device based on silicon dioxide. Professor Chen is due to present an update on the technology at a one-day symposium on emerging non-volatile memory technologies due to be held Friday, April 6 in Santa Clara, California.
Samsung to spend $7 billion on wafer fab in Xian, China
News & Analysis  
4/3/2012   10 comments
Samsung has said it will spend a total of $7 billion on a NAND flash memory wafer fab in Xian, a city in the northwest of China, according to reports.
Texas Memory rolls out eMLC server cache accelerator
Product News  
4/2/2012   Post a comment
The PCIe RamSan-80 integrates cache software from NEVEX to accelerate I/O-intense applications and alleviate latency.
Pick the right SSD drive for the application
Design How-To  
4/2/2012   Post a comment
For enterprises, the optimal SSD will furnish the appropriate level of performance, reliability/endurance, and interoperability to deploy expensive SSDs strategically.
Avery DDR4 and DFI-PHY Verification IP
Product News  
4/2/2012   1 comment
Verification IP provides DDR and LPDDR memory models and a complete DFI-PHY verification solution.
Alliance SDRAM modules support industrial applications
Product News  
4/2/2012   Post a comment
Available in densities of up to 256 Mb, the modules operate over a temperature range of -40°C to +85°C.

As data rates begin to move beyond 25 Gbps channels, new problems arise. Getting to 50 Gbps channels might not be possible with the traditional NRZ (2-level) signaling. PAM4 lets data rates double with only a small increase in channel bandwidth by sending two bits per symbol. But, it brings new measurement and analysis problems. Signal integrity sage Ransom Stephens will explain how PAM4 differs from NRZ and what to expect in design, measurement, and signal analysis.

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