Video: When the fab shuts down News & Analysis 7/30/2008 Post a comment Matt, a young process engineer at the Hynix DRAM fab in Eugene, Oregon, shares his views about the human impact of the Korean company's decision in late July to close its only U.S. manufacturing plant.
SanDisk unveils metric for solid-state drives Product News 7/24/2008 2 comments SanDisk will announce today a metric that reduces to a single number the expected lifetime of a flash disk, hoping the industry will adopt its Longterm Data Endurance approach as a de facto standard for solid-state drives.
Hynix will close 200mm fab in Oregon News & Analysis 7/24/2008 Post a comment Hynix Semiconductor will close within two months a 200mm DRAM wafer fab in Eugene, Oregon, according to local officials speaking immediately after a visit from Hynix chief executive Jong Kap Kim, a move that comes as a reaction to a DRAM market that has been in oversupply for months.
Hynix fab: Expand, diversify or close? News & Analysis 7/23/2008 Post a comment The chairman of Hynix, Jong Kap Kim, is visiting Oregon Wednesday (July 23) on a trip that involves meetings with the governor, the mayor of Eugene where the company has its eight-inch DRAM fab and the president of the University of Oregon in Eugene and speculation about the purpose of the trip ranges widely from talk about an upgrade, diversification or even a closure.
Jedec group will set flash drive standards Product News 7/18/2008 Post a comment Jedec, the standards group best known for its work on DRAM interfaces, has formed a new group to set standards for solid-state disks that use NAND flash chips, chartered to develop standards for solid state drives used for embedded or removable memory storage leveraging the existing storage infrastructure.
Samsung, Sun boost flash drive endurance News & Analysis 7/17/2008 1 comment Samsung Electronics has worked with server maker Sun Microsystems to develop a new 8 Gbit single-level-cell design for computer servers that it claims increases the number of read/write cycles for NAND flash memory chips five-fold.
Virage extends DDR3 offering News & Analysis 7/16/2008 Post a comment Virage Logic has broadened its Intelli DDR memory interface product portfolio with the Intelli DDR3 memory interface that operates up to 1.6 Gb/s.
Rambus sues Nvidia over memory patents News & Analysis 7/11/2008 Post a comment Rambus Inc. filed suit Thursday (July 10) against Nvidia Corp. for violating 17 of its memory patents, extending a long string of court actions to a company outside the memory industry.
3-D chip stacks standardized News & Analysis 7/10/2008 Post a comment The Intimate Memory Interconnect Standard being promoted by the 3D-IC Alliance recently released its official specification for 3-D stacking memory chips.
As data rates begin to move beyond 25 Gbps channels, new problems arise. Getting to 50 Gbps channels might not be possible with the traditional NRZ (2-level) signaling. PAM4 lets data rates double with only a small increase in channel bandwidth by sending two bits per symbol. But, it brings new measurement and analysis problems. Signal integrity sage Ransom Stephens will explain how PAM4 differs from NRZ and what to expect in design, measurement, and signal analysis.
January 2016 Cartoon Caption ContestBob's punishment for missing his deadline was to be tied to his chair tantalizingly close to a disconnected cable, with one hand superglued to his desk and another to his chin, while the pages from his wall calendar were slowly torn away.122 comments