ProMOS to swap debt for equity, say reports News & Analysis 7/26/2011 Post a comment Struggling DRAM maker ProMOS Technologies Inc. has agreed a deal in principle with more than 30 creditor banks to swap half of its NT$57 billion (about $2 billion) of debt for equity, according to a Taiwan Economic News report.
PCM Progress Report No 4: Brains Design How-To 7/22/2011 21 comments This phase-change memory (PCM) progress report explores the use of a PCM to emulate a component of the brain, the synapse, in an impressive piece of work from Stanford University.
Rambus sees Q3 profit on rising revenue News & Analysis 7/22/2011 4 comments Patent licensing company Rambus Inc. made a net loss of $10.6 million on sales revenue of $66.2 million in the second quarter of 2011. However, Rambus (Sunnyvale, Calif.) guided that it would be profitable in Q3 on rising revenue.
Toshiba, SanDisk open NAND flash wafer fab News & Analysis 7/15/2011 7 comments Toshiba Corp. and SanDisk Corp. have announced the opening of Fab 5, the third 300-mm wafer fab for the production of NAND flash memory at Toshiba's Yokkaichi Operations in Mie Prefecture, Japan.
Is your probing setup good enough to measure DDR3 signal integrity? Design How-To 7/13/2011 5 comments DDD3 memory interface speeds have been going up steadily and are now approaching 2000 Mbps data rates. DDR4 is also nearly round the corner . At these high data rates, it is becoming increasingly difficult to get good probing solutions which allow performing Signal Integrity characterization. High speed characterization is considered important for silicon based product development cycle. It is needed to understand the limitations of the current generation of DDR interface designs and to gear
Hynix, Toshiba team up on MRAM News & Analysis 7/13/2011 13 comments Hynix Semiconductor Inc. and Toshiba Corp. have agreed to develop spin-transfer torque magnetoresistance RAMs together with both saying that the technology is an important next-generation non-volatile memory.
Samsung reports trillion-cycle ReRAM Research 7/13/2011 9 comments Researchers from the Samsung Advanced Institute of Technology and the department of physics at Sejong University (Seoul, Korea) have reported on a non-volatile resistive RAM with a read-write endurance of more than one trillion cycles.
Advantest announces NAND flash test solutions Product News 7/11/2011 Post a comment Advantest Corporation announced the availability of two new solutions for next-generation NAND flash memory test: the T5773 for package test and the HA5100CELL, based on the Harmonic architecture, for wafer test.
Printed non-volatile rewritable ferro-electric memories Design How-To 7/11/2011 2 comments Printed electronics has recently moved from a focus on the production of individual components towards the design and initial commercialization of integrated systems. To create such systems, the use of non-volatile random access memory is often essential.
As data rates begin to move beyond 25 Gbps channels, new problems arise. Getting to 50 Gbps channels might not be possible with the traditional NRZ (2-level) signaling. PAM4 lets data rates double with only a small increase in channel bandwidth by sending two bits per symbol. But, it brings new measurement and analysis problems. Signal integrity sage Ransom Stephens will explain how PAM4 differs from NRZ and what to expect in design, measurement, and signal analysis.
January 2016 Cartoon Caption ContestBob's punishment for missing his deadline was to be tied to his chair tantalizingly close to a disconnected cable, with one hand superglued to his desk and another to his chin, while the pages from his wall calendar were slowly torn away.122 comments