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posted in July 2011
Toshiba embedded NAND supports JEDEC's e-MMC
Product News  
7/30/2011   Post a comment
Toshiba America Electronic Components, Inc. (TAEC) has introduced a family of 24-nanometer (nm) e-MMC devices.
TI SRAM targets rad-hard apps
Product News  
7/30/2011   2 comments
The SMV512K32 is a high performance asynchronous CMOS SRAM organized as 524,288 words by 32 bits.
Datasheets.com: Finding the right part just got easier
7/28/2011   24 comments
With the launch of Datasheets.com, EDN and UBM Electronics provide engineers access to over 185 million parts, with features such as comparison, parametric search, search save, and alerts.
ProMOS to swap debt for equity, say reports
News & Analysis  
7/26/2011   Post a comment
Struggling DRAM maker ProMOS Technologies Inc. has agreed a deal in principle with more than 30 creditor banks to swap half of its NT$57 billion (about $2 billion) of debt for equity, according to a Taiwan Economic News report.
GE announces micro-holographic storage that supports 500GB disk at Blu-ray speed
Product News  
7/25/2011   3 comments
The micro-holographic material can support on one disc the same storage capacity as 20 standard Blu-ray discs
Fujitsu FRAM targets industrial, factory, and low-power applications
Product News  
7/22/2011   2 comments
Latest MB85RSxxx SPI Series, MB85RCxxx I2C Series and FRAM-based RFIDs designed and manufactured by Fujitsu.
PCM Progress Report No 4: Brains
Design How-To  
7/22/2011   21 comments
This phase-change memory (PCM) progress report explores the use of a PCM to emulate a component of the brain, the synapse, in an impressive piece of work from Stanford University.
Rambus sees Q3 profit on rising revenue
News & Analysis  
7/22/2011   4 comments
Patent licensing company Rambus Inc. made a net loss of $10.6 million on sales revenue of $66.2 million in the second quarter of 2011. However, Rambus (Sunnyvale, Calif.) guided that it would be profitable in Q3 on rising revenue.
Toshiba, SanDisk open NAND flash wafer fab
News & Analysis  
7/15/2011   7 comments
Toshiba Corp. and SanDisk Corp. have announced the opening of Fab 5, the third 300-mm wafer fab for the production of NAND flash memory at Toshiba's Yokkaichi Operations in Mie Prefecture, Japan.
Promise Technology Pegasus line of high-performance hardware RAID storage systems
Product News  
7/14/2011   7 comments
PROMISE Technology rolled out its Pegasus line of high-performance hardware RAID storage systems, the first peripheral devices to employ Intel's Thunderbolt IO technology.
Is your probing setup good enough to measure DDR3 signal integrity?
Design How-To  
7/13/2011   5 comments
DDD3 memory interface speeds have been going up steadily and are now approaching 2000 Mbps data rates. DDR4 is also nearly round the corner [6]. At these high data rates, it is becoming increasingly difficult to get good probing solutions which allow performing Signal Integrity characterization. High speed characterization is considered important for silicon based product development cycle. It is needed to understand the limitations of the current generation of DDR interface designs and to gear
Hynix, Toshiba team up on MRAM
News & Analysis  
7/13/2011   13 comments
Hynix Semiconductor Inc. and Toshiba Corp. have agreed to develop spin-transfer torque magnetoresistance RAMs together with both saying that the technology is an important next-generation non-volatile memory.
Samsung reports trillion-cycle ReRAM
7/13/2011   9 comments
Researchers from the Samsung Advanced Institute of Technology and the department of physics at Sejong University (Seoul, Korea) have reported on a non-volatile resistive RAM with a read-write endurance of more than one trillion cycles.
New Fujitsu FRAM devices combine benefits of fast-writing SRAMs with Flash in a single IC
Product News  
7/12/2011   1 comment
The MB85RSxxx SPI FRAM family from Fujitsu Semiconductor America, Inc. (FSA) is a new series of advanced Ferroelectric Random Access Memory (FRAM) products designed to meet the rapidly increasing demand for FRAM in industrial systems, factory automation, metering, and many other low-power applications that require high-performance, non-volatile memory.
Advantest announces NAND flash test solutions
Product News  
7/11/2011   Post a comment
Advantest Corporation announced the availability of two new solutions for next-generation NAND flash memory test: the T5773 for package test and the HA5100CELL, based on the Harmonic architecture, for wafer test.
Printed non-volatile rewritable ferro-electric memories
Design How-To  
7/11/2011   2 comments
Printed electronics has recently moved from a focus on the production of individual components towards the design and initial commercialization of integrated systems. To create such systems, the use of non-volatile random access memory is often essential.
Chip inventory continues to build, says IHS
News & Analysis  
7/11/2011   Post a comment
Semiconductor inventory levels at chip suppliers worldwide excluding memory have risen for the seventh consecutive quarter, according to market research company IHS.
Ramtron samples 64-Kb FRAM
News & Analysis  
7/6/2011   3 comments
Ramtron announced broad sampling of its 64-kilobit ferroelectric random access memory, billed as a drop-in replacement for 64-Kb EEPROM.

As data rates begin to move beyond 25 Gbps channels, new problems arise. Getting to 50 Gbps channels might not be possible with the traditional NRZ (2-level) signaling. PAM4 lets data rates double with only a small increase in channel bandwidth by sending two bits per symbol. But, it brings new measurement and analysis problems. Signal integrity sage Ransom Stephens will explain how PAM4 differs from NRZ and what to expect in design, measurement, and signal analysis.

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