ProMOS to swap debt for equity, say reports
News & Analysis 7/26/2011 Post a comment
Struggling DRAM maker ProMOS Technologies Inc. has agreed a deal in principle with more than 30 creditor banks to swap half of its NT$57 billion (about $2 billion) of debt for equity, according to a Taiwan Economic News report.
PCM Progress Report No 4: Brains
Design How-To 7/22/2011 21 comments
This phase-change memory (PCM) progress report explores the use of a PCM to emulate a component of the brain, the synapse, in an impressive piece of work from Stanford University.
Rambus sees Q3 profit on rising revenue
News & Analysis 7/22/2011 4 comments
Patent licensing company Rambus Inc. made a net loss of $10.6 million on sales revenue of $66.2 million in the second quarter of 2011. However, Rambus (Sunnyvale, Calif.) guided that it would be profitable in Q3 on rising revenue.
Toshiba, SanDisk open NAND flash wafer fab
News & Analysis 7/15/2011 7 comments
Toshiba Corp. and SanDisk Corp. have announced the opening of Fab 5, the third 300-mm wafer fab for the production of NAND flash memory at Toshiba's Yokkaichi Operations in Mie Prefecture, Japan.
Is your probing setup good enough to measure DDR3 signal integrity?
Design How-To 7/13/2011 5 comments
DDD3 memory interface speeds have been going up steadily and are now approaching 2000 Mbps data rates. DDR4 is also nearly round the corner . At these high data rates, it is becoming increasingly difficult to get good probing solutions which allow performing Signal Integrity characterization. High speed characterization is considered important for silicon based product development cycle. It is needed to understand the limitations of the current generation of DDR interface designs and to gear
Hynix, Toshiba team up on MRAM
News & Analysis 7/13/2011 13 comments
Hynix Semiconductor Inc. and Toshiba Corp. have agreed to develop spin-transfer torque magnetoresistance RAMs together with both saying that the technology is an important next-generation non-volatile memory.
Samsung reports trillion-cycle ReRAM
Research 7/13/2011 9 comments
Researchers from the Samsung Advanced Institute of Technology and the department of physics at Sejong University (Seoul, Korea) have reported on a non-volatile resistive RAM with a read-write endurance of more than one trillion cycles.
Advantest announces NAND flash test solutions
Product News 7/11/2011 Post a comment
Advantest Corporation announced the availability of two new solutions for next-generation NAND flash memory test: the T5773 for package test and the HA5100CELL, based on the Harmonic architecture, for wafer test.
Printed non-volatile rewritable ferro-electric memories
Design How-To 7/11/2011 2 comments
Printed electronics has recently moved from a focus on the production of individual components towards the design and initial commercialization of integrated systems. To create such systems, the use of non-volatile random access memory is often essential.
Ramtron samples 64-Kb FRAM
News & Analysis 7/6/2011 3 comments
Ramtron announced broad sampling of its 64-kilobit ferroelectric random access memory, billed as a drop-in replacement for 64-Kb EEPROM.