Micron Makes Monolithic 8Gb DDR3 News & Analysis 7/29/2014 6 comments Using a 25 nm manufacturing process, Micron has created a monolithic 8 Gb DDR3 SDRAM component, while a startup is squeezing 8 Gb into a single chipset using proprietary techniques.
Samsung's Silicon Valley Home Blog 7/25/2014 11 comments Samsung is building a 10-story complex in the heart of Silicon Valley that will be home for some of its memory and display researchers and a whole lot of ecosystem efforts.
Future of PCM: Optoelectronic? Blog 7/22/2014 4 comments Work by a team at the University of Oxford and the University of Exeter may well become recognized as the first steps on the road to a new and bright optoelectronic future for phase-change memory materials.
NAND Suit: Toshiba Seeks $1.1B From SK Hynix News & Analysis 7/21/2014 7 comments South Korea's SK Hynix Inc. disclosed in a regulatory filing that Toshiba Corp. is seeking $1.1 billion in damages over the suspected theft of data related to NAND flash memory chip technology.
Testing ReRAM Structures Blog 7/14/2014 2 comments This article by Peter J. Hulbert addresses issues related to characterization and forming, as well as endurance testing for 1R ReRAM structures.
MCUs, Memory Balance Security, Performance News & Analysis 7/10/2014 1 comment The need to secure devices at the MCU or SSD level is becoming more pressing thanks to BYOD and the Internet of Things, but perceptions linger that encryption degrades device performance.
China's SMIC-Qualcomm 28-nm Deal: Why Now? News & Analysis 7/3/2014 16 comments SMIC and Qualcomm revealed their collaboration on 28-nm wafer production in China. Since China's antitrust investigation against Qualcomm, speculation abounds that Chinese are probing ways to coerce Qualcomm into collaborating with their electronics industry.
Crossbar RRAM Aims for 1TB Blog 7/1/2014 7 comments Crossbar demonstrates pre-production 1 MB arrays using its new 1 transistor/n resistor's non-volatile RRAM, addressing “sneak path” current issues to enable high-density memory.
As data rates begin to move beyond 25 Gbps channels, new problems arise. Getting to 50 Gbps channels might not be possible with the traditional NRZ (2-level) signaling. PAM4 lets data rates double with only a small increase in channel bandwidth by sending two bits per symbol. But, it brings new measurement and analysis problems. Signal integrity sage Ransom Stephens will explain how PAM4 differs from NRZ and what to expect in design, measurement, and signal analysis.
January 2016 Cartoon Caption ContestBob's punishment for missing his deadline was to be tied to his chair tantalizingly close to a disconnected cable, with one hand superglued to his desk and another to his chin, while the pages from his wall calendar were slowly torn away.122 comments