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Content tagged with Advanced Technology
posted in December 2012
Top 10 Hurricane Sandy Survival Technologies
News & Analysis  
12/27/2012   10 comments
Tough tech can be an important mitigating tool for natural disasters, enabling city infrastructures to stay up while recovery operations engage.
10 top startups to watch in 2013
News & Analysis  
12/21/2012   17 comments
Here's our list of ten startups focused on a wide range of electronics technologies that are worth keeping an eye on in 2013.
China makes its own 22-nm transistor
News & Analysis  
12/21/2012   6 comments
A Chinese research institute has made a HKMG 22-nm transistor that it expects to form the basis of a manufacturing process for domestic chip companies.
Printed sensor system rolls off the press
Design How-To  
12/20/2012   3 comments
A Norwegian firm has prototyped an all-printed electronic system that includes printed, rewritable memory, sensor and logic.
Oregon courts Azalea project, says report
Blog  
12/19/2012   3 comments
Oregon could be seeking to bid against New York as the site for a wafer fab, according The Oregonian newspaper. The publication reports that Business Oregon, the state's economic development agency, is working with a company under the codename Azalea.
Most popular Automotive DesignLine stories of 2012
Design How-To  
12/19/2012   3 comments
What stories struck readers' fancy in 2012? Plenty it appears.
Globalfoundries mulls third manufacturing option
News & Analysis  
12/18/2012   Post a comment
Globalfoundries is evaluating a third manufacturing option to follow conventional bulk planar CMOS based on a super-steep retrograde well approach.
Dublin Calling: Intel Labs drives Digital Europe
Blog  
12/17/2012   Post a comment
Intel's network of research labs in Europe now embraces more than 4,000 R&D professionals and has more than quadrupled in size since its formation in January 2009. The question that remains is: where is the return on investment for Intel and the benefit for Europe?
Moon probes will buzz surface before crash
Design How-To  
12/14/2012   3 comments
GRAIL, a pair of lunar probes that have been mapping the moon's gravity fields, will skim the lunar surface until colliding with a lunar mountain on Dec. 18.
Ireland still set for FinFETs, says Intel exec
News & Analysis  
12/14/2012   8 comments
Despite sending Irish workers home from training Intel is still working hard in Ireland to prepare for the introduction of P1272, its 14-nm FinFET manufacturing process.
London Calling: Could gate-switched FDSOI win?
Blog  
12/12/2012   5 comments
Simulations from a Scottish EDA company show that fully-depleted silicon-on-insulator process technology is the way to go at 20-nm, but better put the metal-gate in last not first.
Mil-Aero top 10 'How-To' articles for 2012
Design How-To  
12/12/2012   Post a comment
The year’s most popular contributed articles to Military & Aerospace Designline include design features on embedded vision, image sensors, FPGA testing and more.
Decode your family’s genes for Christmas
Engineering Pop Culture!  
12/12/2012   6 comments
Unwrapping presents is cute, but outdated. For a modern Christmas twist, try cracking your genetic code.
London Calling: Whither ST?
Blog  
12/12/2012   6 comments
STMicroelectronics' plan to exit from its joint venture with Ericsson makes sense, but its 2013 timetable suggests selling ST-Ericsson will not be easy.
IBM paves way for wearable electronics, folding displays
News & Analysis  
12/11/2012   6 comments
A cost effective way to manufacture thin, flexible electronics could revolutionize system design.
Toshiba claims MRAM can replace SRAM
News & Analysis  
12/11/2012   7 comments
Smartphones and tablet computers could benefit from a prototype memory that Toshiba expects to be used to replace SRAM in cache memory for mobile processors.
28-nm FDSOI is production ready, says ST
News & Analysis  
12/11/2012   11 comments
To coincide with a meeting on process technology held alongside IEDM, European chip company ST has announced that its 28-nm fully depleted silicon-on-insulator (FDSOI) is available for pre-production volumes from its wafer fab at Crolles, France.
MIT integrates InGaAs in 22-nm design flow
News & Analysis  
12/11/2012   Post a comment
MIT researchers claim their indium gallium arsenide transistors can challenge silicon at 22 nm.
Top 10 smartphone gadgets & apps
News & Analysis  
12/10/2012   9 comments
Smartphones are turning the CE industry upside down. A new design imperative is to leverage a smartphone or build a genuine "partner" for a smartphone, when designing a new gadget.
Silicon photonics ushers in 100G networks
Design How-To  
12/10/2012   2 comments
Some optical functions are easy to implement in silicon, while others are more difficult. We need the whole Optical Engine to be integrated onto the silicon platform...
ST remains committed to FD-SOI, says CEO
News & Analysis  
12/10/2012   2 comments
Despite planning to exit from its joint venture ST-Ericsson, one of few users of its fully-depleted silicon on insulator (FDSOI) manufacturing process, European chip maker intends to keep faith with the technology and continue using it at its wafer fab in Crolles, near Grenoble, France.
London Calling: Russia must deliver on tech investment
Blog  
12/10/2012   2 comments
Rusnano, the state-owned nanotechnology investment fund, has been spending oil wealth like a sailor on shore leave. Now its time to show a return on the investment.
Intel upping Atom ante
News & Analysis  
12/7/2012   20 comments
Intel is positioning its upcoming Atom-based Centerton chip as a server alternative to 64-bit ARM devices.
Slideshow: A year of space firsts
Design How-To  
12/6/2012   12 comments
From Mercury, to Mars to the edge of the solar system, our space machines made unprecedented discoveries this year. We offer a list of the greatest space feats of 2012.
Intel to detail tri-gate advances at IEDM
News & Analysis  
12/6/2012   3 comments
The International Electron Devices Meeting also will focus on circuit-device interaction and energy harvesting, among other cutting edge technologies.
Intel to detail tri-gate advances at IEDM
News & Analysis  
12/6/2012   3 comments
The International Electron Devices Meeting also will focus on circuit-device interaction and energy harvesting, among other cutting edge technologies.
Puzzlebox taps brainwaves to pilot toy helicopter
Design How-To  
12/5/2012   2 comments
Devices that interface via electroencephalogram are giving designers something to cheer about.
Quantum tornadoes generated on semiconductors
Blog  
12/5/2012   3 comments
Scientists have found ways to generate tiny twisters on a chip for more precise measurement.
Researchers tout shatter-proof alternative to fluorescent lights
Design How-To  
12/4/2012   3 comments
Field-induced polymer electroluminescent lighting developed at Wake Forest University eliminates the buzz sound associated with fluorescent bulbs.
Improved context-awareness for mobile phones
News & Analysis  
12/4/2012   2 comments
Sensor Platforms updates its software library to give mobile developers smarter ways to use their sensors.
Qualcomm invests in Sharp to drive MEMS display
News & Analysis  
12/4/2012   5 comments
Sharp and Qualcomm are in a joint dev effort for MEMS displays that use a digital micro shutter that modulates light from an RGB LED backlight.
Caption contest: Santa Claus is coming to town!
Blog  
12/3/2012   3 comments
Have you been naughty or nice? We don't care, as long as you have a great caption for this month's contest!
Partners back nanotube memory for production push
Design How-To  
12/3/2012   3 comments
Two unnamed strategic investors have led a round of investment funding worth more than $10 million for a company that has been developing carbon nanotube memory since about 2000.
GPU grid helping to find AIDS cure
The Engineering Life - Around the Web  
12/1/2012   1 comment
Scientists in Barcelona have been using GPUs to process the protein strains of the virus, in the hopes of eventually finding a way to stop it replicating.


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9/25/2016
4:48:30 PM
michigan0 Sang Kim First, 28nm bulk is in volume manufacturing for several years by the major semiconductor companies but not 28nm FDSOI today yet. Why not? Simply because unlike 28nm bulk the LDD(Lightly Doped Drain) to minimize hot carrier generation can't be implemented in 28nm FDSOI. Furthermore, hot carrier reliability becomes worse with scaling, That is the major reason why 28nm FDSOI is not manufacturable today and will not be. Second, how can you suppress the leakage currents from such ultra short 7nm due to the short channel effects? How thin SOI thickness is required to prevent punch-through of un-dopped 7nm FDSOI? Possibly less than 4nm. Depositing such an ultra thin film less then 4nm filum uniformly and reliably over 12" wafers at the manufacturing line is extremely difficult or not even manufacturable. If not manufacturable, the 7nm FDSOI debate is over!Third, what happens when hot carriers are generated near the drain at normal operation of 7nm FDSOI? Electrons go to the positively biased drain with no harm but where the holes to go? The holes can't go to the substrate because of the thin BOX layer. Some holes may become trapped at the BOX layer causing Vt shift. However, the vast majority of holes drift through the the un-dopped SOI channel toward the N+Source,...
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