Einstein Ratio for Electrons in Silicon under a High Electric Field Design How-To 2/27/2002 3 comments Shrinking process
technologies have brought many semiconductor-material effects
that affect device performance and reliability to the
forefront. Vijay K. Arora of Wilkes University in Pennsylvania
discusses the variation of the Einstein ratio between carrier
diffusion coefficient and mobility under a high electric field,
which impacts submicron-device characterization.
Atrenta focus on distribution News & Analysis 2/24/2002 Post a comment Atrenta, the design tools company spun off from Interra, is looking for a European distributor for the latest release of its predictive analy-sis Spyglass software.
SystemC rollout to design groups under way at ST News & Analysis 2/13/2002 Post a comment STMicroelectronics has started to roll out tools based around the SystemC language to its design groups as it begins the process to standardise systems modeling techniques across the company on a language the company helped drive initially. The first few design groups are now using the language and a toolset built by ST and Synopsys.
Design team says RISC processor is first diagonally interconnected IC News & Analysis 2/6/2002 Post a comment SAN FRANCISCO -- A 200-MHz RISC processor has become the first IC to be successfully laid out with diagonal interconnect lines as proposed under the "X Architecture" initiative, said a technical paper presented by Toshiba Corp., its ArTile subsidiary and Simplex Solutions Inc. at the International Solid-State Circuits Conference (ISSCC).
Digital Video IC Set For Debugging Ride Design How-To 2/1/2002 Post a comment With the decreasing feature sizes of state-of-the-art process technologies, design teams are faced with the challenge of quickly and efficiently mapping high-level functions onto a growing number of available transistors.
Subwavelength Size Traces Design Flows Design How-To 2/1/2002 Post a comment As the semiconductor industry hit the 0.18-micron generation, it entered a new regime. For the first time, leading-edge device feature sizes became significantly smaller than the wavelength of light used by available best-in-class optical-lithography equipment.
MCM and BGAs Characterization using Planar EM Simulation Design How-To 2/1/2002 Post a comment When designing at multi-GHz frequencies, you need to include accurate IC-package models and analysis. Agilent's Jim DeLap reviews MCM and BGA technologies, simulation issues, and EM simulator requirements, along with several practical simulation examples.