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Content tagged with Optoelectronic
posted in April 2004
SMT LEDs achieve high brightness
Product News  
4/19/2004   Post a comment
Vishay Intertechnology, Inc. said it has developed a new family of surface-mount (SM) LEDs that delivers exceptional brightness thanks to a specially designed leadframe profile that greatly improves device heat dissipation.
Digi-Key offers Agilent products
Product News  
4/19/2004   Post a comment
Agilent Technologies Inc. and catalog distributor Digi-Key Corp. have signed a distribution agreement that allows Digi-Key to sell components from Agilent's Semiconductor Products Group (SPG).
Photodiodes deliver high performance
Product News  
4/16/2004   Post a comment
Hamamatsu Corp. said its new S9251 series of silicon (Si) avalanche photodiodes (APDs) deliver excellent sensitivity in the near infrared (NIR) range and high operational stability for use as a rangefinder and in spatial light transmission applications such as optical telecommunications systems and digital computers.
Gallium nitride startup attracts $6 million, names new CEO
News & Analysis  
4/9/2004   Post a comment
Nitronex Corp., a privately-held manufacturer of gallium nitride-based RF power transistors, said it has completed a $6 million round of additional funding.


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What are the engineering and design challenges in creating successful IoT devices? These devices are usually small, resource-constrained electronics designed to sense, collect, send, and/or interpret data. Some of the devices need to be smart enough to act upon data in real time, 24/7. Specifically the guests will discuss sensors, security, and lessons from IoT deployments.

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9/25/2016
4:48:30 PM
michigan0 Sang Kim First, 28nm bulk is in volume manufacturing for several years by the major semiconductor companies but not 28nm FDSOI today yet. Why not? Simply because unlike 28nm bulk the LDD(Lightly Doped Drain) to minimize hot carrier generation can't be implemented in 28nm FDSOI. Furthermore, hot carrier reliability becomes worse with scaling, That is the major reason why 28nm FDSOI is not manufacturable today and will not be. Second, how can you suppress the leakage currents from such ultra short 7nm due to the short channel effects? How thin SOI thickness is required to prevent punch-through of un-dopped 7nm FDSOI? Possibly less than 4nm. Depositing such an ultra thin film less then 4nm filum uniformly and reliably over 12" wafers at the manufacturing line is extremely difficult or not even manufacturable. If not manufacturable, the 7nm FDSOI debate is over!Third, what happens when hot carriers are generated near the drain at normal operation of 7nm FDSOI? Electrons go to the positively biased drain with no harm but where the holes to go? The holes can't go to the substrate because of the thin BOX layer. Some holes may become trapped at the BOX layer causing Vt shift. However, the vast majority of holes drift through the the un-dopped SOI channel toward the N+Source,...
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