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Content tagged with Passive
posted in June 2008
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Trimmer offers 10-, 20- and 50-ohm total resistance values
Product News  
6/5/2008   Post a comment
Bourns claims its Model 3312 is the industry's first trimming potentiometer with 10-, 20- and 50-ohm total resistance values for applications that require small resistance corrections.
Fingerprint sensor delivers greater durability, improved biometric performance
Product News  
6/4/2008   Post a comment
Targeted at 2009 notebook PC designs, the TCS5 TouchStrip fingerprint sensor with a new SteelCoat coating from UPEK delivers greater durability.
Demystifying UHF Gen 2 RFID, HF RFID
Design How-To  
6/3/2008   Post a comment
Whether you are considering using high frequency (HF) RFID technologies or ultra high frequency (UHF) Gen 2, the first question you must ask yourself is why? This article provides information to help you make informed choices on tags and technology.
Cypress claims industry's first programmable single-chip laser navigation system
Product News  
6/2/2008   Post a comment
Cypress Semiconductor says its OvationONS II SoC is the industry's first to integrate a laser navigation sensor and programmable Flash-based microcontroller on one die.
Tuning fork crystals target high-density applications
Product News  
6/2/2008   Post a comment
Raltron Electronics has introduced two series of surface-mount tuning fork crystals that are suitable for accurate time of day and other read-out requirements.
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What are the engineering and design challenges in creating successful IoT devices? These devices are usually small, resource-constrained electronics designed to sense, collect, send, and/or interpret data. Some of the devices need to be smart enough to act upon data in real time, 24/7. Specifically the guests will discuss sensors, security, and lessons from IoT deployments.

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michigan0 Sang Kim First, 28nm bulk is in volume manufacturing for several years by the major semiconductor companies but not 28nm FDSOI today yet. Why not? Simply because unlike 28nm bulk the LDD(Lightly Doped Drain) to minimize hot carrier generation can't be implemented in 28nm FDSOI. Furthermore, hot carrier reliability becomes worse with scaling, That is the major reason why 28nm FDSOI is not manufacturable today and will not be. Second, how can you suppress the leakage currents from such ultra short 7nm due to the short channel effects? How thin SOI thickness is required to prevent punch-through of un-dopped 7nm FDSOI? Possibly less than 4nm. Depositing such an ultra thin film less then 4nm filum uniformly and reliably over 12" wafers at the manufacturing line is extremely difficult or not even manufacturable. If not manufacturable, the 7nm FDSOI debate is over!Third, what happens when hot carriers are generated near the drain at normal operation of 7nm FDSOI? Electrons go to the positively biased drain with no harm but where the holes to go? The holes can't go to the substrate because of the thin BOX layer. Some holes may become trapped at the BOX layer causing Vt shift. However, the vast majority of holes drift through the the un-dopped SOI channel toward the N+Source,...
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