Infineon signs Chinese IGBT deal News & Analysis 11/24/2010 5 comments Infineon Technologies AG has signed a license agreement with Xinjiang Goldwind Science and Technology Co. Ltd., a Chinese manufacturer of wind power equipments allowing the company to make core components for wind turbines.
Vishay's SiHG47N60S power MOSFET Product News 11/12/2010 1 comment Vishay is offering a 600V power MOSFET that features a 15.12 O-nC gate charge times on-resistance and 0.07 O on resistance in a TO-247 package.
A123 plugs into global battery market News & Analysis 11/8/2010 17 comments Advanced battery design and manufacture have become a strategic battleground for the emerging energy technology
industry. EE Times Confidential tells you why it matters.
Next-gen power electronics spur energy efficiency Design How-To 11/5/2010 Post a comment Over the last 30 years, it is estimated power semiconductors have helped improve efficiency of cars by 40%. Now with government green-energy and CO2 reduction plans, the power semiconductor industry is expected to contribute further improvements in energy efficiency. Here are the options.
As data rates begin to move beyond 25 Gbps channels, new problems arise. Getting to 50 Gbps channels might not be possible with the traditional NRZ (2-level) signaling. PAM4 lets data rates double with only a small increase in channel bandwidth by sending two bits per symbol. But, it brings new measurement and analysis problems. Signal integrity sage Ransom Stephens will explain how PAM4 differs from NRZ and what to expect in design, measurement, and signal analysis.
January 2016 Cartoon Caption ContestBob's punishment for missing his deadline was to be tied to his chair tantalizingly close to a disconnected cable, with one hand superglued to his desk and another to his chin, while the pages from his wall calendar were slowly torn away.122 comments