The development and implementation of 3-D circuit technology will again be thoroughly explored at this year's International Electron Devices Meeting.
The development of replacements for conventional silicon channel
material seems to have sparked a lot of work in this area. One paper
offers some results in terms of transistor performance achieved with Ge
channels and ZrO2 gate dielectric while another describes microwave
anneal techniques for Ge CMOS.
Another session combines imagers
and integrated sensor topics. If you have any interest in imager
technology, be it current or historical, then I recommend a presentation
from Panasonic, “Evolution of Optical Structure in Image Sensors.”
TSV technology appears poised for a commercial breakout, one paper from
Tohoku University in the Device Characterization and Reliability
session should be noted: “Minimizing the Deleterious Effect of Local
Deformation Caused by Cu-TSVs and CuSn/InAu-Microbumps in High- Density
In addition to the increased focus on interfaces with
newer device topologies and new channel materials, we also see renewed
interest in noise characterization of both types of new devices. Check
out this paper for more: “Insights in Low Frequency Noise of Advanced
and High-Mobility Channel Transistors.”
Finally, Marvell co-founder Weili Dai is speaking at IEDM’s inaugural “Entrepreneurs Lunch” on Wednesday (Dec. 12).
Intel to detail tri-gate advances at IEDM
IEDM targets next-gen memory technologies