Stuck in snowy Ottawa, I missed the IEEE International Electron Devices Meeting in San Francisco, but the press kit offered more than enough fodder for a column.
Back to the flash session, there is obviously a lot
of work going on there. Some of it proposes material changes like TaN
metal gates (North Carolina State University) and high-K dielectrics in
the floating gate format. Besides this and the Intel-Micron paper on
25-nm NAND and Samsung's 27-nm offering, there are also four papers on
charge trapping flash. It certainly appears that charge storage
non-volatile memory continues its march. The splash made by the
Techinsights product discovery should not cause a panic.
at IBM was celebrated at IEDM this year with several awards to IBM
researchers. Consider the three citations in relation to the recent
discussions about technology development internally versus the
outsourced model of chip production.
The 2010 IEEE Cledo
Brunetti Award was given to Ghavam G. Shahidi, IBM T.J. Watson Research
Center, "For contributions to and leadership in the development of
silicon-on-insulator CMOS technology."
The 2010 IEEE Andrew S.
Grove Award was presented to Bijan Davari, IBM T.J Watson Research
Center, "For contributions to high performance deep-submicron CMOS
The 2010 IEEE Frederik Philips Award went to John
E. Kelly III, IBM, "For leadership in the development and
commercialization of silicon technology and for forging
industry-university partnerships for semiconductor research and
And if you are a foundry customer, you take
comfort knowing TSMC is keeping pace in advanced technologies. A
development team presented a paper on advanced FinFET structures. "High
Performance 22nm FinFET CMOS Devices with Advanced High-K / Metal Gate
Scheme" was authored by C.C. Wu and a long list of contributors.
as we see possibilities emerging for 22-nm logic and nodes beyond,
silicon replacements and non-planar structures each offer a path. As if
to make the point that they are aggressive in both those sandboxes,
Intel presented, "Non-Planar, Multi-Gate InGaAs Quantum Well Field
Effect Transistors with High-K Gate Dielectric and Ultra-Scaled
Gate-to-Drain/Gate-to-Source Separation for Low Power Logic
Applications" by M. Radosavljevic and others.
I'm already looking forward to next year in DC. Hopefully, I will get a bit closer to the action.