About a year and a half ago, I invited you to join me on the Memory Designline, a site/publication unlike any other, that was designed for people working with, designing, and selecting memory products
About a year and a half ago, I invited you to join me on the Memory Designline, a site/publication unlike any other, that was designed for people working with, designing, and selecting memory products. You accepted the invite and have been steadfastly supporting the site ever since.
In fact, the site has been incredibly successful, and we have brought you design features on emerging technologies as well as the tried and true. Today I pass the torch to Kristin Lewotsky, who is very enthusiastic to take over as editor of the Memory Designline. As an additional change, Kristin will be increasing the frequency of the Memory Designline newsletters to weekly (from twice a month), so please be sure to update her on your new product news and send her your abstracts and ideas for new design features (firstname.lastname@example.org). I will be moving on to other projects in the UBM universe, namely working on Test & Measurement World, Test & Measurement Designline, and continuing my work on the RF&Microwave Designline. So, I will see you around I am sure. In the meantime, thanks for the memories!
The innovative application of a mix of simulation techniques has provided a team at IBM with a unique ability to view the connection between atomic bond type, drift and electrical conductivity in PCM devices. Results overturn some old ideas of band gap expansion.
Wide band gap semiconductor materials (diamond, silicon carbide, and gallium nitride) are well positioned to play important roles in the next and future generations of consumer and military/defense electronics capability.