Conference presentations can provide a great deal of insight, but sometimes the most valuable work gets done on an informal basis. That's the focus of the IEEE International Memory Workshop (IMW), scheduled for May 26 through 29 in Monterey, CA. Sponsored by the IEEE Electron Devices Society, the IMW brings designers, integrators, and end-users together in a workshop environment that allows them to focus on memory technology in the context of market needs.
The meeting addresses all aspects of volatile and nonvolatile memory, including flash, DRAM, SRAM, PCRAM, RRAM, MRAM, charge trap memory, embedded memory, and other types of memories. It's aimed at not just researchers and designers but end users who need to gain a better understanding of the field. “Everybody can get something out of the conference no matter what stage of the product development cycle they are in,” says general chairman Pranav Kalavade, principal engineer, non-volatile solutions group, Intel Corp. “Someone looking at blue sky research has something to get out of this conference while someone working on today’s problems also get something because we are showcasing the state-of-the-art, also.”
The meeting also includes evening panels designed address hot topics in the memory and memory system field like the intriguingly titled “MRAM/STTRAM/TA-MRAM which ones have a future? For which applications? Which challenges are still on the way?” This panel features a veritable who's who of MRAM figures:
Phill LoPresti, CEO of Everspin. The company’s toggle MRAM is finding more and more applications, including automotive, bikes, avionics, and aerospace, and the recently released a 64-Mb in-plane STT-MRAM product. LoPresti will talk about his vision of the progress of STT-MRAM from low density to high density applications.
Bertrand Cambou , chairman and CEO of Crocus Technology. Crocus is one of the few companies focused on thermally assisted MRAM technology, in particular their magnetic logic unit approach. Cambou will talk about this alternative STT-MRAM technology, which is not main stream but which does offer certain specific advantages.
Yiming Huai, vice president of technology at Avalanche Technology. Avalanche is hard at work on an STT-based non-volatile, ultra-low power, high-speed magnetic memory. The company expects its spin-programmable memory (SPMEM) to be scalable well below 10 nm and stackable in 3-D architecture. Huai will talk about high density STT-MRAM and multibit STT-MRAM for DRAM replacement.
Tetsuo Endoh, professor at the Tohoku University Center for Spintronics Integrated Systems. He will talk about STT-MRAM for logic-in-memory and normally-off/instant-on architectures, and his views on the various possible uses of STT-RAM in electronic circuits.
Kang Wang, Distinguished Professor and Raytheon Chair in Electrical Engineering at the University of California, Los Angeles. Wang will talk about more advanced and longer term concepts that he is studying such as voltage-controlled MRAM (rather than the usual current-controlled MRAM). These devices should have much lower power consumption but the path is still long to real applications.
Moderating the panel will be Bernard
Dieny, an IEEE Fellow and world-renowned figure in the field of spintronics, currently deputy director of CEA Spintec. A few of the broad-based questions the panelists have been asked to address include:
Do you believe that one of the MRAM technologies could become a universal memory? If so, when?
Is MRAM going to co-exist with other non-volatile memory technologies (PCM, RRAM, etc.)?
The meeting also features an all-day workshop on resistive RAM, covering everything from switch technologies and materials to applications (and lunch).
Early registration ends April 27. For more information or to download the advance program, click here.