One-day workshop highlights scalability, materials research, and next-gen non-volatile memories like STT-RAM, Re-RAM, and PCM.
NAND flash memory won’t scale forever. As gate sizes shrink, endurance drops, making the development of next-generation non-volatile memory (NVM) a matter of increasing importance. Indeed, analyst Yann De Charentenay at Yole Développement expects the NVM niche memory markets to reach $2 billion by 2018. Will NVM eventually replace DRAM and NAND? Attend the 2013 Memory Workshop at the Innovation Days event held by Leti, the technology transfer arm of the French research and technology institute, and find out. De Charentenay kicks off the one-day workshop, which features an array of speakers from industry and academia covering some interesting-looking topics, including:
“Embedded 1T Flash NOR: still alive at 40 nm. And beyond?” Christian Boccaccio, STMicroelectronics
“Downsize scalability of STTRAM to and beyond the 20nm node.,” Bernard Dieny, CEA-Spintec
“Phase Change Memories Take Their Role in the NVM Arena,” Paolo Cappelletti, Micron
“Design Exploration of Hybrid IC using CMOS and ReRAM technologies,” Olivier Thomas, CEA-Leti
Melting and quenching during RESET are essential to the operation of a phase change memory (PCM) device. This follow-up article explores the role of melting during threshold switching and the post-threshold switching conducting state prior to SET state crystallization.
January 2016 Cartoon Caption ContestBob's punishment for missing his deadline was to be tied to his chair tantalizingly close to a disconnected cable, with one hand superglued to his desk and another to his chin, while the pages from his wall calendar were slowly torn away.122 comments