One-day workshop highlights scalability, materials research, and next-gen non-volatile memories like STT-RAM, Re-RAM, and PCM.
NAND flash memory won’t scale forever. As gate sizes shrink, endurance drops, making the development of next-generation non-volatile memory (NVM) a matter of increasing importance. Indeed, analyst Yann De Charentenay at Yole Développement expects the NVM niche memory markets to reach $2 billion by 2018. Will NVM eventually replace DRAM and NAND? Attend the 2013 Memory Workshop at the Innovation Days event held by Leti, the technology transfer arm of the French research and technology institute, and find out. De Charentenay kicks off the one-day workshop, which features an array of speakers from industry and academia covering some interesting-looking topics, including:
“Embedded 1T Flash NOR: still alive at 40 nm. And beyond?” Christian Boccaccio, STMicroelectronics
“Downsize scalability of STTRAM to and beyond the 20nm node.,” Bernard Dieny, CEA-Spintec
“Phase Change Memories Take Their Role in the NVM Arena,” Paolo Cappelletti, Micron
“Design Exploration of Hybrid IC using CMOS and ReRAM technologies,” Olivier Thomas, CEA-Leti
A team from IBM & ETH, Zurich, have put normally unwanted stochastic effects to good use. Making use of the fact that phase change devices are able to offer a more accurate representation of biological systems than perhaps any other solid state device.