One-day workshop highlights scalability, materials research, and next-gen non-volatile memories like STT-RAM, Re-RAM, and PCM.
NAND flash memory won’t scale forever. As gate sizes shrink, endurance drops, making the development of next-generation non-volatile memory (NVM) a matter of increasing importance. Indeed, analyst Yann De Charentenay at Yole Développement expects the NVM niche memory markets to reach $2 billion by 2018. Will NVM eventually replace DRAM and NAND? Attend the 2013 Memory Workshop at the Innovation Days event held by Leti, the technology transfer arm of the French research and technology institute, and find out. De Charentenay kicks off the one-day workshop, which features an array of speakers from industry and academia covering some interesting-looking topics, including:
“Embedded 1T Flash NOR: still alive at 40 nm. And beyond?” Christian Boccaccio, STMicroelectronics
“Downsize scalability of STTRAM to and beyond the 20nm node.,” Bernard Dieny, CEA-Spintec
“Phase Change Memories Take Their Role in the NVM Arena,” Paolo Cappelletti, Micron
“Design Exploration of Hybrid IC using CMOS and ReRAM technologies,” Olivier Thomas, CEA-Leti
The innovative application of a mix of simulation techniques has provided a team at IBM with a unique ability to view the connection between atomic bond type, drift and electrical conductivity in PCM devices. Results overturn some old ideas of band gap expansion.
Wide band gap semiconductor materials (diamond, silicon carbide, and gallium nitride) are well positioned to play important roles in the next and future generations of consumer and military/defense electronics capability.