Seems to me that everyone is speculating on the future of NAND flash these days, and how it will affect the existing storage market. Today, I heard from my contacts at Forward Insights about a new report on NAND flash they have published in conjunction with NaMLab GmbH (aka Nanoelectronic Mateirals Laboratory, a non-profit daughter company of TU Dresden).
The report takes a look at near-term scaling limitations for NAND flash, despite the long-term promise of developing technology nodes in the low 2x nanometer range. Then the two companies ask, so what's after NAND? And they take a look at a number of alternative candidates to replace floating-gate NAND flash memories, including spin-torque-transfer MRAM, phase change memory (PCM), conductive bridge memory, metal oxide-based valence change memory, as well as vertically stacked implementations of memory cells or 3D memory.
For more information on the report, you can contact firstname.lastname@example.org.
For more information Forward Insights, head to www.forward-insights.com.
For more information NaMLab, head to www.namlab.com