Seems to me that everyone is speculating on the future of NAND flash these days, and how it will affect the existing storage market. Today, I heard from my contacts at Forward Insights about a new report on NAND flash they have published in conjunction with NaMLab GmbH (aka Nanoelectronic Mateirals Laboratory, a non-profit daughter company of TU Dresden).
The report takes a look at near-term scaling limitations for NAND flash, despite the long-term promise of developing technology nodes in the low 2x nanometer range. Then the two companies ask, so what's after NAND? And they take a look at a number of alternative candidates to replace floating-gate NAND flash memories, including spin-torque-transfer MRAM, phase change memory (PCM), conductive bridge memory, metal oxide-based valence change memory, as well as vertically stacked implementations of memory cells or 3D memory.
For more information on the report, you can contact email@example.com.
For more information Forward Insights, head to www.forward-insights.com.
For more information NaMLab, head to www.namlab.com
I think, about a month back, we were discussing about the future of the NAND memories. Some believe that, the year 2011 is going to be the year of NAND memories. Is there any estimated time frame, by when the memories using newer technologies (such as MRAM, PCM etc.) are going to take place of the conventional memory technologies?
NAND can't scale below the ONO thickness of 17-18 nm plus the silicon thickness of at least few nm. But that is where NAND is now. To go 3d to expand capacity has yield and ECC consequences which may offset the economic benefit.
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