Cree is going to showcase its latest packaged GaN HEMT power transistors and high power amplifier (HPA) MMIC in the 2.7-3.5 GHz range (S-Band) at the 2011 IEEE International Microwave Symposium held June 7-9 in Baltimore.
The company tells me that these products offer the industry's best-known combination of power and efficiency, achieving typical power-added efficiencies (PAEs) of 60%. They report that this results in a reduction in power consumption of up to 20% over alternative solutions.
Cree will be exhibiting this and other products at the upcoming MTT-S Show in Baltimore from June 7-9 at booth #1925. Go ahead and check them out or sound off here with questions and comments.
Are you seeing this newborn love among "makers," board vendors, and chip companies? What mystifies me is not so much the love part, but how anyone could eventually mistake this infatuation for good business.