GaN transistors and high power MMICs are the order of the day.
Cree is going to showcase its latest packaged GaN HEMT power transistors and high power amplifier (HPA) MMIC in the 2.7-3.5 GHz range (S-Band) at the 2011 IEEE International Microwave Symposium held June 7-9 in Baltimore.
The company tells me that these products offer the industry's best-known combination of power and efficiency, achieving typical power-added efficiencies (PAEs) of 60%. They report that this results in a reduction in power consumption of up to 20% over alternative solutions.
Cree will be exhibiting this and other products at the upcoming MTT-S Show in Baltimore from June 7-9 at booth #1925. Go ahead and check them out or sound off here with questions and comments.
A team from IBM & ETH, Zurich, have put normally unwanted stochastic effects to good use. Making use of the fact that phase change devices are able to offer a more accurate representation of biological systems than perhaps any other solid state device.