GaN transistors and high power MMICs are the order of the day.
Cree is going to showcase its latest packaged GaN HEMT power transistors and high power amplifier (HPA) MMIC in the 2.7-3.5 GHz range (S-Band) at the 2011 IEEE International Microwave Symposium held June 7-9 in Baltimore.
The company tells me that these products offer the industry's best-known combination of power and efficiency, achieving typical power-added efficiencies (PAEs) of 60%. They report that this results in a reduction in power consumption of up to 20% over alternative solutions.
Cree will be exhibiting this and other products at the upcoming MTT-S Show in Baltimore from June 7-9 at booth #1925. Go ahead and check them out or sound off here with questions and comments.
The innovative application of a mix of simulation techniques has provided a team at IBM with a unique ability to view the connection between atomic bond type, drift and electrical conductivity in PCM devices. Results overturn some old ideas of band gap expansion.
Wide band gap semiconductor materials (diamond, silicon carbide, and gallium nitride) are well positioned to play important roles in the next and future generations of consumer and military/defense electronics capability.