GaN transistors and high power MMICs are the order of the day.
Cree is going to showcase its latest packaged GaN HEMT power transistors and high power amplifier (HPA) MMIC in the 2.7-3.5 GHz range (S-Band) at the 2011 IEEE International Microwave Symposium held June 7-9 in Baltimore.
The company tells me that these products offer the industry's best-known combination of power and efficiency, achieving typical power-added efficiencies (PAEs) of 60%. They report that this results in a reduction in power consumption of up to 20% over alternative solutions.
Cree will be exhibiting this and other products at the upcoming MTT-S Show in Baltimore from June 7-9 at booth #1925. Go ahead and check them out or sound off here with questions and comments.
Competitors, partners, and customers in our interdependent semiconductor industry often have mutual interests that could benefit from cooperation. By offering customers efficiency, we’d all win. Sadly, that’s not how things often work.