Breaking News
Blog

R&D tax credit: Big benefits, but little used by industry

Blog
2/22/2012 09:52 PM EST

 4 comments   post a comment
NO RATINGS
View Comments: Oldest First | Newest First | Threaded View
Tax Point Advisors, Inc.
User Rank
Author
re: R&D tax credit: Big benefits, but little used by industry
Tax Point Advisors, Inc.   2/23/2012 1:01:15 PM
NO RATINGS
Electrical engineering firms can quality for both Federal as well as many state R&D tax credits. If you're looking for an alternative to a bigger, more expensive R&D study service provider, the firm I founded and own, Tax point Advisors, Inc., offers studies for half the fee of most other R&D firms, and we are the only R&D provider with a 100% success rate to date, never having had a client lose a credit under audit. You can reach us at (800) 260-4138, and our website is www.taxpointadvisors.com. We have offices across the U.S., including in CAo, OH, TX, NY, and MA. Jeffrey Feingold Founder and Managing Partner Tax Point Advisors, Inc.

nicolas.mokhoff
User Rank
Author
re: R&D tax credit: Big benefits, but little used by industry
nicolas.mokhoff   2/23/2012 8:21:38 PM
NO RATINGS
My take: if the nomenclature is partly blamed fpr holding back electronics companies using the R&D Credit, why not change it to something like "Innovation Tax Credit". Many people think of themselves as real innovators; hey, if that works, we have at least one-third of the problem solved.

george.leopold
User Rank
Author
re: R&D tax credit: Big benefits, but little used by industry
george.leopold   2/29/2012 8:05:05 PM
NO RATINGS
This is a worthwhile debate since it is shedding light on the relative worth of tax breaks for high-tech industries. There are other ways to encourage investment besides subsidies and tax breaks. One is product standards. Creating industry standards eliminates much market uncertainty, including regulatory uncertainty. If manufacturers know product specs, they will be more willing to invest to expand product manufacturing. That alone would create as many, if not more, new jobs as the R&D tax credit.

george.leopold
User Rank
Author
re: R&D tax credit: Big benefits, but little used by industry
george.leopold   2/29/2012 10:06:25 PM
NO RATINGS
Speaking of tech standards (see above), a congressional committee held a hearing today on the role of standards in boosting U.S. exports. This from Rep. Donna Edwards of Maryland: "Standards can open up new or expanding markets to a U.S. company. However, standards can also serve as a barrier to trade, keeping U.S. companies out and sending profits elsewhere. When things go awry in the international standards realm – when someone tries to manipulate the standards system or rig it to their own ends – it really matters for U.S. companies and the U.S. economy."

Most Recent Comments
michigan0
 
SteveHarris0
 
realjjj
 
SteveHarris0
 
SteveHarris0
 
VicVat
 
Les_Slater
 
SSDWEM
 
witeken
Most Recent Messages
9/25/2016
4:48:30 PM
michigan0 Sang Kim First, 28nm bulk is in volume manufacturing for several years by the major semiconductor companies but not 28nm FDSOI today yet. Why not? Simply because unlike 28nm bulk the LDD(Lightly Doped Drain) to minimize hot carrier generation can't be implemented in 28nm FDSOI. Furthermore, hot carrier reliability becomes worse with scaling, That is the major reason why 28nm FDSOI is not manufacturable today and will not be. Second, how can you suppress the leakage currents from such ultra short 7nm due to the short channel effects? How thin SOI thickness is required to prevent punch-through of un-dopped 7nm FDSOI? Possibly less than 4nm. Depositing such an ultra thin film less then 4nm filum uniformly and reliably over 12" wafers at the manufacturing line is extremely difficult or not even manufacturable. If not manufacturable, the 7nm FDSOI debate is over!Third, what happens when hot carriers are generated near the drain at normal operation of 7nm FDSOI? Electrons go to the positively biased drain with no harm but where the holes to go? The holes can't go to the substrate because of the thin BOX layer. Some holes may become trapped at the BOX layer causing Vt shift. However, the vast majority of holes drift through the the un-dopped SOI channel toward the N+Source,...
Navigate to Related Links

Datasheets.com Parts Search

185 million searchable parts
(please enter a part number or hit search to begin)
Like Us on Facebook
EE Times on Twitter
EE Times Twitter Feed