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Comparing Leading-Edge NAND Flash Memories
7/25/2013

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An overview of NAND storage node structure for each device. Most manufacturers use an IPD layer 12nm or thinner as devices scale down, so the physical thickness of the IPD layer is a key factor for future NAND device scaling. IMFT reduced FG height dramatically by adopting a planar structure. This reduces cell interference and increases process reliability.
An overview of NAND storage node structure for each device. Most manufacturers use an IPD layer 12nm or thinner as devices scale down, so the physical thickness of the IPD layer is a key factor for future NAND device scaling. IMFT reduced FG height dramatically by adopting a planar structure. This reduces cell interference and increases process reliability.

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resistion
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CEO
Re: IPD Layer
resistion   7/28/2013 11:52:27 AM
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Ultimately the space between FGs of different bit lines would be all IPD.

mcgrathdylan
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Blogger
Re: Air Gap
mcgrathdylan   7/26/2013 6:54:12 PM
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@ScottenJ- yes, I see what you mean. That is a little confusing. I think if you are interested in the report you need to fill out the information on the left side of the page (name, email, company, etc.). Then I'm not sure what happens.

http://www.techinsights.com/reports-and-subscriptions/open-market-reports/Report-Profile/?ReportKey=9236

ScottenJ
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Rookie
Re: Air Gap
ScottenJ   7/26/2013 12:40:51 PM
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The "Our report (registration required)" link goes to a page that lists the report but doesn't have an option to download it.

 

ScottenJ
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Rookie
Re: Air Gap
ScottenJ   7/26/2013 12:37:38 PM
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Air gaps reduce capacitance thereby lowering parasitic coupling between adjacent cells.

JanineLove
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Blogger
IPD Layer
JanineLove   7/26/2013 10:43:35 AM
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"This means the physical thickness of the IPD layer is one key factor for future NAND device scaling." What are the manufacturing challenges that need to be overcome for this?

JanineLove
User Rank
Blogger
Air Gap
JanineLove   7/26/2013 10:43:05 AM
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How does an air-gap process to achieve high performance?

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