A comparison of gate air-gap features on each NAND device. Advanced gate air-gap processes have been adopted to achieve high performance and reliability. Toshiba adopted an air-gap process on its 19nm NAND device, while Samsung adopted it on 21nm. IMFT uses a mature air-gap process adopted from its 25nm NAND devices.
@ScottenJ- yes, I see what you mean. That is a little confusing. I think if you are interested in the report you need to fill out the information on the left side of the page (name, email, company, etc.). Then I'm not sure what happens.