Breaking News
Blog

Low-Cost Cabinet Solution for Prototype Systems

Blog
8/21/2014 02:10 PM EDT

 21 comments   post a comment
Page 1 / 2 Next >
View Comments: Newest First | Oldest First | Threaded View
<<   <   Page 3 / 3
Max The Magnificent
User Rank
Author
An intuitive GUI woudl be tasty
Max The Magnificent   8/21/2014 2:21:06 PM
NO RATINGS
@Charles: I'm thinking that if you did this via a Kickstarter project, you could raise the money to create an intuitive and easy-to-use design feature on your website.

Here's the way it could go. First, the user enters the outer dimensions of the cabinet they want to create (the used can specify units of inches or mm/cm).

Taking the dimensions of the extrusions into account, the system uses the user-provided dimensions to automatically create the outlines/templates for the top, bottom, side, and end panels.

In the case of expert users with access to 3D mechanical CAD packages, these users could take the generated panels and modify them to their heart's content.
In the case of novice/hobby users, you could provide a drag-and-drop feature to create holes in the panels -- you could have circles, ellipses, rectangles, rectangles with rounded corners, etc. After dragging one onto a panel, the user could specify dimensions (e.g., D diameter, W wide, T tall, etc.; also X-Y offsets from the lower-left corner of the panel. You could also provide cut/copy/paste type facilities -- also shapes for common connectors and suchlike. Maybe do something similar for the silkscreen/annotations... Just a thought...

<<   <   Page 3 / 3
Most Recent Comments
michigan0
 
SteveHarris0
 
realjjj
 
SteveHarris0
 
SteveHarris0
 
VicVat
 
Les_Slater
 
SSDWEM
 
witeken
Most Recent Messages
9/25/2016
4:48:30 PM
michigan0 Sang Kim First, 28nm bulk is in volume manufacturing for several years by the major semiconductor companies but not 28nm FDSOI today yet. Why not? Simply because unlike 28nm bulk the LDD(Lightly Doped Drain) to minimize hot carrier generation can't be implemented in 28nm FDSOI. Furthermore, hot carrier reliability becomes worse with scaling, That is the major reason why 28nm FDSOI is not manufacturable today and will not be. Second, how can you suppress the leakage currents from such ultra short 7nm due to the short channel effects? How thin SOI thickness is required to prevent punch-through of un-dopped 7nm FDSOI? Possibly less than 4nm. Depositing such an ultra thin film less then 4nm filum uniformly and reliably over 12" wafers at the manufacturing line is extremely difficult or not even manufacturable. If not manufacturable, the 7nm FDSOI debate is over!Third, what happens when hot carriers are generated near the drain at normal operation of 7nm FDSOI? Electrons go to the positively biased drain with no harm but where the holes to go? The holes can't go to the substrate because of the thin BOX layer. Some holes may become trapped at the BOX layer causing Vt shift. However, the vast majority of holes drift through the the un-dopped SOI channel toward the N+Source,...

Datasheets.com Parts Search

185 million searchable parts
(please enter a part number or hit search to begin)
Like Us on Facebook
EE Times on Twitter
EE Times Twitter Feed