Qualcomm is looking to leverage Monolithic 3D IC technology to win market share in the 8 billion dollar smart phone market.
Starting as soon as 2016 Qualcomm is looking to leverage Monolithic 3D IC technology to win market share in the 8 billion dollar smart phone market, said Karim Arabi, vice president of engineering at Qualcomm, speaking at the International Symposium on Physical Design (ISPD-2015, Mar. 29-April 1). This was reported by the EE Times blog titled 3D Qualcomm SoC Testing on Horizon. Arabi’s presentation slides, along with the corresponding CEA Leti slides, are now available on the ISPD-2015 conference site.
Qualcomm’s long term focus on Monolithic 3D was reviewed in our EE Times blog Qualcomm Calls for Monolithic 3D. Qualcomm calls it now “3DV” and plans to use it for future scaling. See the following slide presented by Arabi.
Quoting: "Our 3D VLSI technology, which we call 3DV, enables die size to be shrunk in half, while simultaneously increasing yields,”...“The final advantage of 3DV chips,” according to Arabi, “is that you only need to use the most expensive and latest node technology on the bottom layer. For instance, the bottom layer housing the CPU, GPU and other high-speed devices can be fabricated at 10-to-14 nanometer, whereas the higher layers housing less critical functions can be fabricated at a less expensive relaxed node of, say, 28-nanometers.”
The following slide presented by Arabi illustrates their Monolithic 3D technology (“3DV”) process flow, which seem very similar to the CEA Leti CoolCube program co-sponsored by Qualcomm.
Arabi’s presentation also discussed the design tools available for Monolithic 3D. For the short term Qualcomm is planning to use conventional 2D EDA with scripts and an additional software program to design their Monolithic 3D devices as illustrated in the following two slides.
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