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Ron Neale
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Re: interesting
Ron Neale   6/15/2017 5:35:13 AM
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Resisition:- Yes I did mention that as an option and it is a consideration. When I initially looked at the TEM I did think the threshold switch might have been a bit of misinformation and there was amorphous pn junction, colored mauve and green colors in my Figure 1. I am hoping to get a simulation of the structure which might give us some estimate of what it will take to position the central hotspot as a function of the electrical conductivity  and thickness of the barrier layers. In the limit of course you are right and with close enough coupling it might be possible to use the threshold switching filament as a heater as illustrated below.



 

 

resistion
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Re: interesting
resistion   6/15/2017 1:06:25 AM
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2a might be more "practical" although the symmetry might be broken by the presence of the switch on one side.

Ron Neale
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Re: interesting
Ron Neale   6/14/2017 11:35:46 AM
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Resistion:-If you consider my dual crystallization (DC) model of figure 2(a) there will be one snap-back for the memory and one for the threshold switch. However, if you consider the DC model from figure 2(b) you are right there will be two snap-backs for memory and one for the threshold switch. I guess it would depend how thick the central nucleus region is. (I was advised by one of my reviewers to place less emphasis on 2(b) and they would know).

On the subject of snap-backs that might be a misnomer for these very small devices. I think they might show a more of a thermistor-like softer breakdown.

resistion
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interesting
resistion   6/14/2017 9:12:20 AM
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Very interesting analysis as always, Ron. The dual programming scenario makes me concerned about larger Vth distribution and actually it requires two filaments (one for each amorphous snapback) to align.

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