A battle of mathematical papers has broken out at arXiv.org on the topic of the memristor, which may be part of the future of non-volatile memory devices.
A battle of mathematical papers has broken out at arXiv.org, an online repository for academic papers, on the topic of the memristor, which may be part of the future of non-volatile memory devices.
Professor Hyongsuk Kim of the Department of Electronics Engineering at Chonbuk National University, South Korea, and two co-researchers have published a paper on arXiv.org that seeks to show that pinched hysteresis loops are the "fingerprint" of memristive devices.
Professor Kim's paper stands in direct opposition to an earlier paper on arXiv.org from Blaise Mouttet, of Arlington, Virginia, that EE Times referenced in Memristor brouhaha bubbles under.
The term memristor has been used to describe various two-terminal non-volatile memory devices currently in R&D and may have been used in patent applications, which could make apparently academic arguments about the mathematics of hysteresis curves commercially relevant.
Whereas Mouttet attempts to show that Professor Leon Chua – the circuit theorist who coined the term memristor back in 1971 – had made an error, Professor Kim and his co-authors start with criticism of Mouttet and seek to show by way of detailed mathematics that it is Mouttet who is in error and that Chua's work stands.
Professor Chua used the term memristor to describe a fourth fundamental two-terminal passive circuit element – after the resistor, capacitor and inductor. Hewlett-Packard Co. (HP) adopted the memristor term for a metal-oxide resistive RAM technology it began to develop some time before 2008.
Blaise Mouttet argues that the memory device under development at HP Labs is not a memristor but part of a broader class of variable resistance systems.
Types of non-volatile memory devices currently in the field or under development include: Resistive RAM (RRAM or ReRAM), phase-change memory (PCM) or phase-change RAM (PCRAM), conductive-bridging RAM (CBRAM), ferroelectric RAM (FRAM) as well as ferroelectric polarization memories made using organic materials.
The arXiv.org system started out as a means of organizing learned paper pre-prints which had been distributed by email in the early days of internet communication. As such arXiv.org is not peer-reviewed, although it is understood that moderators do exist to categorize and re-categorize submissions.
Related links and articles:
Related links and articles:
Pinched hysteresis curves is the fingerprint of memristive devices
Memresistors and non-memristive zero-crossing hysteresis curves
Memristor 'brouhaha' bubbles under
HP, Hynix plan to launch memristor memory in 2013
IMEC claims ReRAM filament breakthrough
Samsung reports trillion-cycle ReRAM
HP discovers memristor mechanism