Yan Borodovsky Intel Corp. senior fellow and director of advanced lithography at Intel's Technology and Manufacturing Group
(Though it originally pushed for EUV, Intel is now weighing a mix-and-match lithography strategy.)
"I think complementary lithography is the right direction [for future IC designs]. . . . 193-nm lithography is the most capable and most mature technology that can meet both fidelity and cost-of-ownership requirements, but it has a weakness in terms of resolution. Complementing 193 nm with a new technology might be the best cost-of-ownership, performance and fidelity solution. The complementary technology could be either EUV or e-beam lithography.
"I think introducing EUV as a complementary technology has its challenges for high-volume manufacturing. Introducing multibeam e-beam as a complementary technology [also has its challenges].
"NAND flash makers have a much higher probability of introducing something like EUV before we do. Logic actually has more degrees of freedom in terms of layout, design rules and restrictions. So I can see why Samsung will be more aggressive to deploy EUV. They have no choice but to go to smaller wavelengths, higher NA [numerical apertures] and a K1 of 0.25."