Back in 1997, Intel led the formation of EUV LLC, a consortium that planned to commercialize extreme ultraviolet lithography by 2005.
Yan Borodovsky Intel Corp. senior fellow and director of advanced lithography at Intel's Technology and Manufacturing Group
(Though it originally pushed for EUV, Intel is now weighing a mix-and-match lithography strategy.)
"I think complementary lithography is the right direction [for future IC designs]. . . . 193-nm lithography is the most capable and most mature technology that can meet both fidelity and cost-of-ownership requirements, but it has a weakness in terms of resolution. Complementing 193 nm with a new technology might be the best cost-of-ownership, performance and fidelity solution. The complementary technology could be either EUV or e-beam lithography.
"I think introducing EUV as a complementary technology has its challenges for high-volume manufacturing. Introducing multibeam e-beam as a complementary technology [also has its challenges].
"NAND flash makers have a much higher probability of introducing something like EUV before we do. Logic actually has more degrees of freedom in terms of layout, design rules and restrictions. So I can see why Samsung will be more aggressive to deploy EUV. They have no choice but to go to smaller wavelengths, higher NA [numerical apertures] and a K1 of 0.25."