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9|28|2016 SAN JOSE, Calif. – Samsung researchers are working on a new approach to computing that could revamp data centers, said a corporate strategist. Separately, ...

9|28|2016 MUNICH—In a cross-industry alliance, Audi, BMW and Daimler along with telecommunications equipment providers Ericsson, Huawei and Nokia as well as ...

9|27|2016 SAN JOSE, Calif. — Plugging utilities and factories into Web services and third-party apps is no easy feat. Just ask Rich Carpenter, the executive behind ...

9|27|2016 GRENOBLE, France — With the inexorable rise of apps and software driven by Google, Facebook and Apple, Silicon Valley has long since ceased to be about the ...

9|26|2016 SAN JOSE, Calif. – Calling for 100x faster processors, China Web giant Baidu released DeepBench, an open source benchmark for how fast processors train ...

9|26|2016 SAN JOSE, Calif. — The MIPS core will be used in a new cellular baseband processor shipping next year and a supercomputer in the works in Japan. The two ...

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Re: GaAs instead of Silicon Germanium: Sang Kim First, 28nm bulk is in volume manufacturing for several years by the major semiconductor companies but not 28nm FDSOI today yet. Why not? Simply because unlike 28nm bulk the LDD(Lightly Doped Drain) to minimize hot carrier generation can't be implemented in 28nm FDSOI. Furthermore, hot carrier reliability becomes worse with scaling, That is the major reason why 28nm FDSOI is not manufacturable today and will not be. Second, how can you suppress the leakage currents from such ultra short 7nm due to the short channel effects? How thin SOI thickness is required to prevent punch-through of un-dopped 7nm FDSOI? Possibly less than 4nm. Depositing such an ultra thin film less then 4nm filum uniformly and reliably over 12" wafers at the manufacturing line is extremely difficult or not even manufacturable. If not manufacturable, the 7nm FDSOI debate is over!Third, what happens when hot carriers are generated near the drain at normal operation of 7nm FDSOI? Electrons go to the positively biased drain with no harm but where the holes to go? The holes can't go to the substrate because of the thin BOX layer. Some holes may become trapped at the BOX layer causing Vt shift. However, the vast majority of holes drift through the the un-dopped SOI channel toward the N+Source,...
michigan0 on GF Debuts 7nm, Embedded MRAM
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The UNH-IOL has been testing Ethernet products since its inception in 1988, and over the years we have come across some Ethernet products that really puzzled us. Here are ...
When I look at the big signal, the first ever EDICON show in the U.S. (Boston, Sept. 20-22 2016) was flat. I kept looking for engineers from the major system ...
After Apple announced another iPhone to a flat reaction from Wall Street, it appears the smartphone revolution is fading into the past. The maturing sector has seen ...
In last week's quiz, I introduced you to some concepts for how and when to use decoupling capacitors for power integrity. This week, we continue our quiz. I will be ...
Security is a broad concept even within a specific arena such as embedded systems. Basic security principles are applicable whether the asset to be protected is ...
I'm sure you've seen those Star Trek episodes where the Klingon or Romulan cloaking device makes a ship appear to disappear. While we haven't yet figured out to make ...
“Oh honey, girls don’t do math.”
Consumers and developers alike will want to know which manufacturers produce the most up-to-date, reliable, and best-performing Android devices. So, we recently compiled a ...

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What are the engineering and design challenges in creating successful IoT devices? These devices are usually small, resource-constrained electronics designed to sense, collect, send, and/or interpret data. Some of the devices need to be smart enough to act upon data in real time, 24/7. Specifically the guests will discuss sensors, security, and lessons from IoT deployments.

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