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9|22|2016 SAN JOSE, Calif. – Taiwan’s largest semiconductor kitchen released its latest menu, a 3D matrix that spans process, packaging and ...

9|22|2016 PARIS — Whatever you call them — smart microphones, virtual digital assistant, personal home robots, The Control Voice or R2D2 — Amazon ...

9|21|2016 SAN JOSE, Calif. – A new startup will emerge from stealth mode and into the super-heated market for machine learning next week. Wave Computing will ...

9|20|2016 SANTA CLARA, Calif. – Developers need to start writing applications to pave the way for servers using a new class of persistent memory, said a researcher ...

latest comment rick merritt I hope its royalty free ;-)

9|19|2016 SEATTLE—The US National Institute of Standards and Technology (NIST) has recently issued two draft reports on cybersecurity issues of interest to ...

9|16|2016 SAN JOSE, Calif. – It’s still early days for 5G cellular, according to a Qorvo engineer attending the 3GPP meetings where the standard is being ...

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Why the multicopter? It has every thing in it. 58 of ...
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Infineon explains their philosophy and why the multicopter ...
After a four-year absence, Infineon returns to Mobile World ...
A laptop’s 65-watt adapter can be made 6 times smaller and ...
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michigan0
Re: GaAs instead of Silicon Germanium: Sang Kim First, 28nm bulk is in volume manufacturing for several years by the major semiconductor companies but not 28nm FDSOI today yet. Why not? Simply because unlike 28nm bulk the LDD(Lightly Doped Drain) to minimize hot carrier generation can't be implemented in 28nm FDSOI. Furthermore, hot carrier reliability becomes worse with scaling, That is the major reason why 28nm FDSOI is not manufacturable today and will not be. Second, how can you suppress the leakage currents from such ultra short 7nm due to the short channel effects? How thin SOI thickness is required to prevent punch-through of un-dopped 7nm FDSOI? Possibly less than 4nm. Depositing such an ultra thin film less then 4nm filum uniformly and reliably over 12" wafers at the manufacturing line is extremely difficult or not even manufacturable. If not manufacturable, the 7nm FDSOI debate is over!Third, what happens when hot carriers are generated near the drain at normal operation of 7nm FDSOI? Electrons go to the positively biased drain with no harm but where the holes to go? The holes can't go to the substrate because of the thin BOX layer. Some holes may become trapped at the BOX layer causing Vt shift. However, the vast majority of holes drift through the the un-dopped SOI channel toward the N+Source,...
michigan0 on GF Debuts 7nm, Embedded MRAM
Jessigute
Jessigute on Intel Quark Runs on Roof, Raises Questions
yoyoma0
yoyoma0 on EE Times Silicon 60: 2016's Emerging Companies to Watch
realjjj
realjjj on TSMC Expands its 3D Menu
Opinion
In last week's quiz, I introduced you to some concepts for how and when to use decoupling capacitors for power integrity. This week, we continue our quiz. I will be ...
Security is a broad concept even within a specific arena such as embedded systems. Basic security principles are applicable whether the asset to be protected is ...
I'm sure you've seen those Star Trek episodes where the Klingon or Romulan cloaking device makes a ship appear to disappear. While we haven't yet figured out to make ...
“Oh honey, girls don’t do math.”
Consumers and developers alike will want to know which manufacturers produce the most up-to-date, reliable, and best-performing Android devices. So, we recently compiled a ...
On August 15, IEEE members received ballots to vote on proposed amendments to the IEEE constitution. While this vote may not conjure up as much emotion as the U.S. ...
Today companies that model the properties and behavior of RF signals in natural, urban and industrial settings use databases to organize environmental RF data. Their data ...
Capacitors. We too often take them for granted. When it comes to high-speed circuits, capacitors can behave like resistors or even inductors, depending on the frequencies ...

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