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7|11|2014 MADISON, Wis. — Samsung took the wraps off a new LTE radio chip this week. The chip, supporting both FDD and TDD, is built on the 28-nm HKMG process. It's ...

7|10|2014 MADISON, Wis. — For the first time, an automobile company has conceded that a software glitch in electronic control units could cause cars to accelerate ...

7|11|2014 PORTLAND, Ore. -- Quantum dots are already being used to improve the color accuracy in high-end televisions like Sony's Bravia, and are being experimented with ...

7|10|2014 NEW YORK CITY - Taiwan Semiconductor Manufacturing Co. (TSMC) began shipping mobile processors to Apple during the second quarter of this year and will continue ...

7|10|2014 Cellphone chipmaker Qualcomm is buying the imaging operations of CSR plc, which are based in Israel, according to local reports. CSR announced it would be ...

7|10|2014 Power management of mobile devices is in the news following the recent announcement by the Transportation Security Administration that any electronic devices ...

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28nm FD-SOI : Rank Manager  28nm FD-SOI michigan0   7/12/2014 9:48:59 PM Sang Kim Handel Jones says 28nm FD-SOI is an alternate option  for low leakage, high yields and high performance superior  to 28nm bulk technology. Consequently, Samsung can support low leakage products with its 28nm FD-SOI. look at the real issues with FD-SOI. My first question is why  28nm FD-SOI is still not manufactured today by major  semiconductor companies because 28nm bulk is manufactured  for several years by major semiconductor companies today  such as Intel, TSMC, Samsung and others. The real issue with un-doped FD-SOI channel is how to  prevent the drain voltage induced punchthrough leakage  current. In order to prevent such punchthrough leakage  current it is imperative to have an ultra thin SOI channel layer  between the source and drain so that with Vg=0V the SOI  channel is so thin that the drain field can't penetrate the thin   SOI channel or the punchthrough leakage current can't take   place. How thin SOI channel thickness has to be in order to   stop the punchthrough leakage current? It depends on the   channel or gate length, Lg. For shorter Lg, a thinner SOI   channel is required. This is the most critical issue for FD-SOI.   For 28nm FD-SOI a 7nm thin SOI channel thickness is   required to stop the punchthrough. However, the transistor  performance becomes significantly degraded due to the  transistor mobility degradation because of scattering of  charge carriers at the top gate oxide surface and at the  bottom SOI surface in the 7nm thin SOI channel. As a result,  even if 28nm FD-SOI were manufactured today, it wouldn't  be superior to 28nm bulk in terms of transistor performance  and manufacturing costs due to significantly higher SOI wafer  costs. These are the major reasons why the 28nm FD-SOI  is not manufacturable today.  The other major issue with FD-SOI is its scalerbility. For 20/22nm FD-SOI a 4~5 nm SOI channel thickness is required to stop the punchthrough leakage current, thus further  degrading transistor mobility. Furthermore, it is extremely  difficult to control 4~5nm SOI channel thickness uniformly and reliably across 12 inch wafers in the manufacturing line. How  thin...
michigan0 on 28nm FD-SOI: Samsung & ST's Major Opportunity
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