EINDHOVEN, Netherlands – NXP Semiconductors N.V. has announced a
range of dual Power-SO8 MOSFETs with an eye toward automotive
applications such as fuel injection, ABS and stability control.
The LFPAK56D portfolio is AEC-Q101 qualified claims a
77 percent smaller footprint than the equivalent DPAK
solution which typically requires two devices.
LFPAK56D combines two fully isolated MOSFETs into a single package
designed to meet the rigorous requirements of the automotive
industry. With the industry’s widest range of R
DSon
values across five voltage grades, it provides the best
performance, current handling and reliability on the market. This
new range of dual Power-SO8 MOSFETs offers customers complete
flexibility and freedom to pick the device that best matches the
application and module requirements, while also achieving a much
higher power density.
Designing with LFPAK56D lowers costs through simpler PCB
assembly, ease of inspection and shrinking module size.
Smaller modules also means a significant saving in weight,
which is particularly attractive to manufacturers focused on
reducing CO2 emissions.
'Copper clip'
Building on NXP’s expertise in LFPAK56, which was the first
power-SO8 package on the market fully qualified to AEC-Q101,
NXP is now introducing the same reliable ”copper clip” bonding
technology to dual Power-SO8 MOSFETs in LFPAK56D. This copper
clip technology is what gives the package its advantage in low
package resistance, inductance and high maximum ID
rating.
Key Features
- Dual Power-SO8 MOSFET
- 77% smaller footprint than the equivalent DPAK solution
- Copper clip technology - Wire bond free
- High maximum ID rating
- Low package resistance and inductance
- Low thermal resistance
- High current transient robustness
- Automotive AEC-Q101 qualified to 175°C
The
LFPAK56D range is in
volume production and is available immediately.
