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chipmonk
In order to gain credibilty this group would have to publish technical details - ...
docdivakar
Nice move, the open ecosystem part is appealing; how ever, is there a clearly ...
UMC, Stats ChipPac team for 3-D IC demo
Peter Clarke
1/29/2013 8:48 AM EST
LONDON – Chip packager Stats ChipPac Ltd. and foundry United Microelectronics Corp. have demonstrated a 3-D stacked chip made using through-silicon vias (TSVs) and developed under an open ecosystem collaboration.
The 3-D chip stack comprises a Wide I/O memory test chip stacked on top of a 28-nm processor test chip with embedded TSVs. Stats ChipPac and UMC did not reveal the processor type or the source of the Wide I/O die.
Under the 3D-IC development project with Stats ChipPac, UMC provided the front-end of line wafer manufacturing with a 28-nm polysilicon silicon oxynitride gated process that includes TSVs.
The know-how developed will be applied for implementation on the foundry's 28-nm high-K metal gate (HKMG) process, the companies said. For MEOL and BEOL, Stats ChipPac performs the wafer thinning, wafer backside integration, copper pillar bumping and chip-to-chip 3-D stacking.
"We see no imperative to restrict 3-D IC to a captive business model, as UMC's development work with nearly all the major OSAT [outsourced semiconductor assembly and test] partners for 3-D IC has been very productive. Our successful collaboration with a leading OSAT partner like STATS ChipPAC has further established the viability of an open ecosystem approach," said S.C. Chien, vice president of Advanced Technology Development at UMC, in a statement issued by Stats ChipPac.
Related links and articles:
www.umc.com
www.statschippac.com
News articles:
DesignCon: Cisco packs silicon photonics on 3-D ICs
UMC, Singapore's IME team on TSV process for image sensors
Stats ChipPac re-appoints former ST boss as director
Navigate to related information


chipmonk
1/29/2013 11:41 AM EST
Since TSMC rather aggressively staked out their claim to the whole process flow for TSV based 3-D stacking, the liliputs have been forming consortia.
More power to them.
But 3D is not yet a mature technology ( immature process steps e,g. high aspect ratio fille TSVs, bond / debond, OR unresolved performance issues: stress and heat related effects on devices in the inner layers ).
Its implementation into products, like any new technology will start at the high end ( military, medical implants ),not with Smart Phones, perhaps not even Servers as some Boosters have been promising for a few years.
At present much of the hot air is coming from Govt. funded European Research Labs. They do not have an enviable record in Microelectronics.
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resistion
1/29/2013 8:13 PM EST
I worry that the TSV trend will favor the more (only?) vertically integrated electronics company, i.e., Samsung, since there is no standards barrier for them.
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pica
1/30/2013 4:30 AM EST
Heat is even a problem in 2D designs. How do 2.5D or 3D designs deal with heat?
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resistion
1/30/2013 6:29 AM EST
Depends on thermal resistance of the interposer.
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pica
1/30/2013 8:11 AM EST
But independent of the thermal resistance of the interposer the heat surface ratio get worse.
One idea to deal with that problem to significally frequncies and over-compensate this with massiv paralellism. As a simple example instead of transmitting 256bit@2GHz, transmit 4Kbit@0.5GHz. Heat dissipation should almost be the same, but the throughtput increased 4x. I know also latency increases 4x.
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Kresearch
1/30/2013 8:31 AM EST
I remembered UMC teamed with PowerTech and Elpida in 3DIC ~2 years ago. Now team with Stats ChipPac. This implied something. @Peter could we get more insight?
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docdivakar
1/30/2013 12:00 PM EST
Nice move, the open ecosystem part is appealing; how ever, is there a clearly defined EDA flow or is it going to be a hodgepodge of piecing together a disparate set of tools?
MP Divakar
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chipmonk
1/30/2013 4:24 PM EST
In order to gain credibilty this group would have to publish technical details - the sooner the better. What were the bandwidth and power needed to transfer data ? Include construction details and all electrical / functional tests carried out.
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