The future of charge-trapping flash memory
Reflections and transmission lines
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Creating highly reliable FPGA designs
Scaling NAND flash to 20-nm node and beyond
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DRAM makers turn to new process for sub-nm cells
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Using non-volatile memory IP in system on chip designs
Microchip to acquire embedded memory IP supplier
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How to use ECC to protect embedded memories
How do we make 3-D NAND flash practical?
Solid-state drive interface gets first interop test
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Address jitter and noise more effectively with DDR4: Part 2
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SanDisk's 1Y flash stays at 19-nm
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Intel outlines 3-D NAND transition
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Address jitter and noise more effectively with DDR4: Part 1
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Globalfoundries joins Qualcomm in MRAM research
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