Next week, the International Microwave Symposium
(IMS2012) opens in Montreal, Canada (June 17-22), and it promises to be an interesting venue, conference, and exhibition. There will be a keynote talk, “3G/4G Chipsets and the Mobile Data Explosion
” by Steve Mollenkopf, President and Chief Operating Officer of Qualcomm on Monday, 18 June 2012, at 5:30 p.m.
The Exhibition part of the show runs 9AM-5PM on Tuesday the 19th, 9AM to 6PM on Wednesday the 20th, and 9AM to 3PM on Thursday the 21st. Here is a preview of what some of the exhibitors will be showcasing this year.Lake Shore CryotronicsBooth 305
Lake Shore Cryotronics will be featuring its line of cryogenic and cryogen-free closed cycle refrigerator (CCR) probe stations. Lake Shore has ten distinct probe station models, including four cryogen-free CCR probe stations and six cryogenic models. The line of probe stations are well suited for non-destructive measurement of the electrical, magneto-transport, electro-optical, parametric, high-Z, DC, RF, and microwave properties of materials and test devices. Molex Incorporated
Molex will showcase a selection of its standard and custom RF coaxial connectors, cable assemblies and unique solutions
for today's applications. With its subsidiary Temp-Flex LLC, Molex will display its microwave coaxial cables designed for high-bandwidth applications such as military and aerospace, defense, automatic test equipment and medical applications. Molex and Radiall will highlight their continued collaboration with the cost-effective SMP-MAX series featuring new symmetrical adapters and RF coaxial interconnect solutions for board-to-board, module-to-module and panel-to-panel telecom applications.
Also in the booth will be the Molex FAKRA II SMB connectors, which meet both American and German FAKRA automotive standards and offer a 360º rotation for easy routing inside the automobile and a secondary plug locking latch for increased reliability. Molex will also exhibit its Precision 2.4mm Compression-Mount Test Connectors, the industry’s only high-speed vertical PCB launch configuration operating to 50 GHz.
NXP will be offering demos of its high-performance RF technologies and solutions in the categories of:
- Wireless infrastructure: high-efficiency digital power amplifier, integrated SiGe based RF functions for an optimized BTS radio design board. The next step in BTS highly integrated LNA using SiGe:C.
- Aerospace & defense: GaN power amplifier for C-Band, wideband medium PA for rugged environments.
- High-performance RF in SiGe:C: low noise amplifiers for portable applications such as GPS, WLAN and FM.
- Broadcast/ISM: 3 stage GaN power amplifier line-up
NXP will also be showcasing its recently announced, state-of-the-art VGAs offering high linearity, low noise and low power consumption across a wide frequency band. Anritsu
Anritsu will be making several announcements centered on its VectorStar family of vector network analyzers (VNAs) . Among them will be a new noise figure measurement capability that will make VectorStar the only VNA platform capable of measuring noise figure from 30 GHz to 125 GHz.Passive Plus, Inc.
Booth 829Passive Plus, Inc
. offers a line of traditional Hi-Q high power, Low ESR/ESL, low noise, high self-resonance ultra-stable performance capacitors. Usually used for wireless broadcasting equipment, mobile base stations, GPS portables, MRI coils, and radar, these capacitors are 100% RoHS and offered in magnetic and non-magnetic terminations. Passive Plus now has available the popular 0505 series with part markings indicating part values. Freescale
Freescale will introduce several new RF products during IMS 2012. It will be demonstrating the RF performance capability of several new Airfast™ cellular infrastructure amplifier devices and showing how its wide video bandwidth capability, higher power densities and improved, Doherty-friendly impedances make these devices candidates for the next generation of base stations. It will also be showing a wide variety of GaAs and MMIC component solutions that are targeted for femto, pico, and small cell applications in the emerging Heterogeneous Network market space.
Freescale representatives will be speaking and/or organizing a variety of sessions during IMS, RFIC, and ARFTG.
Sunday, June 17, 1300 – 1700 (ARFTG)
WSO: Advancements in Front End Modules for Mobile and Wireless Applications
Organizers: Joseph Staudinger, Freescale Semiconductor., Freek van Straten, NXP, Gary Zhang, Skyworks Solutions Inc.
Monday, June 18, 0800 – 1700 (ARTFG)
WMC: Advanced Techniques for Electromagnetic-Based Model Generation
Organizers: Peter H. Aaen, Freescale Semiconductor, Michel Nakhla, Carleton University
Monday, June 18, 1000 – 1200 (RFIC)
RMO2E: Advanced Transmitters and Power Amplifiers
Chair: Donald Lie, Texas Tech University
Co-Chair: Joe Staudinger, Freescale Semiconductor
Tuesday, June 19, 1330 – 1600 (RFIC)
Interactive Forum, RTUIF17: A Novel mmWave CMOS VCO with an AC Coupled LC Tank
V. P. Trivedi and K. To, Freescale Semiconductor
Tuesday, June 19, 1600 – 1720 (IMS)
TU4B, Focus Session: Coupled Multi-Physics Modeling of High-Power and High-
Frequency Electronic Devices
Chair: Peter H. Aaen, Freescale Semiconductor
Co-Chair: John Wood, Freescale Semiconductor
Wednesday, June 20, 1200 – 1320 (IMS)
Room 516 AC
Panel Session: How will LDMOS and III-V Device Technologies Play in Cellular Infrastructure Future Markets?
Organizer: Basim Noori, Freescale Semiconductor
1. Dr. James Wong, Manager RF Power at Alcatel-Lucent
2. Dr. Steve Cripps, Professor, Cardiff University
3. Ray Pengelly, Strategic Business Development Manager, Cree Semiconductors Inc.
4. Paul Hart, Systems Engineering Manager, Freescale Semiconductor
5. John Gajadharsing, Application Manager, NXP Semiconductors
6. Khan Salam, Principal Electrical Engineer (RFPA), Rockwell Collins Radio
7. Dr. Oleh Krutko, Device Design Engineering Manager, TriQuint
Wednesday, June 20, 1350 – 1530
WE3C: Advances in CAD Algorithms
Chair: Roni Khazaka, McGill University
Co-Chair: Peter H. Aaen, Freescale Semiconductor
Thursday, June 21, 1330 – 1550
THPP-1: High Power Solid-State Oscillator for Microwave Oven Applications
T. Shi, K. Li, Freescale Semiconductor
Thursday, June 21, 1430 – 1450
TH3D-4: A 350W, 2GHz, 44% Efficient LDMOS Power Amplifier Design with Capability to Handle a Wideband 65MHz Envelope Signal
A. M. Ahmed, J. Babesku , J. Schultz, H. H. Ladhani, J. Jones, M. Bokatius, P. Hart, Freescale Semiconductor