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Soitec boosts production of silicon-on-sapphire wafers

11/7/2012 3:09 PM EST

SAN FRANCISCO—France-based semiconductor materials supplier Soitec SA has more than doubled its production of bonded silicon-on-sapphire (BSOS) substrates to meet increased demand from customer Peregrine Semiconductor Corp., Soitec said Tuesday (Nov. 6).  

Peregrine (San Diego)—a fabless provider of high-performance radio frequency ICs—said it increased the peak-production capability of its latest-generation STeP5 UltraCMOS technology-based RF switches to more than 2 million units a day. The production increase is to support design wins in the RF front ends of advanced 4G smart phones and other wireless-communication applications, Peregrine said.

Soitec's direct wafer-bonding technologies are used to produce the BSOS substrate employed in the manufacture of Peregrine's semiconductor wafers.  

“We are experiencing powerful traction in the market with the latest STeP5 UltraCMOS RF switches, and we believe these products enable the high level of RF performance that is critical for new, 4G LTE smartphones and wireless devices,” said Mark Miscione, vice president of RF technology solutions at Peregrine, in a statement.  

"As a result of supporting Peregrine Semiconductor’s continued strong growth, we have reached a new level in high-volume manufacturing for our bonded-SOS product," said Bernard Aspar, vice president of Soitec’s layer transfer solutions business unit. "Bonded SOS is part of our strategy to deliver leading-edge engineered substrates for mobile electronic-device markets."

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