datasheets.com EBN.com EDN.com EETimes.com Embedded.com PlanetAnalog.com TechOnline.com  
Events
UBM Tech
UBM Tech

Design Article

Simple automatic-shutoff circuit uses few components

Noureddine Benabadji, University of Sciences and Technology, Oran, Algeria

7/23/2012 5:48 PM EDT

Click here to download a PDF

You often need to include a timed automatic-turn-off circuit in battery-powered equipment to extend battery life. Previously published Design Ideas for this function all involve many components (references 1 through 7). The circuit in Figure 1 is a simple automatic-shutoff add-on circuit featuring no quiescent current.

When you press the pushbutton switch, C1 charges rapidly through the low-value R2 to the zener voltage of diode D1, and P-channel MOSFET Q1 immediately conducts. After the pushbutton is released, C1 discharges slowly through the high-value R1 with a time constant of R1C1 seconds. During this time, C1 loses 63% of its initial voltage— from 9V to 3V after the delay. Reference 8 shows the on-resistance versus the gate-to-source voltage of a Vishay Siliconix Si4435. As long as the gate-to-source voltage is greater than approximately 3V, the device’s on-resistance remains lower than 0.1Ω, yielding a dropout voltage of less than 0.1V for a load sinking as much as 1A.

The 9.1V zener diode, D1, keeps the shutoff time delay independent of the battery voltage and ensures that the gate-to-source voltage does not exceed Q1’s rated maximum of 20V. Thus, you can use this circuit with a choice of battery voltages; only the maximum drain-to-source voltage of transistor Q1 limits the choice. With 3.6 to 9V batteries, D1 and R1 are useless (remove D1 and short-circuit R2), and you must compute the time delay with the classic equation T=−R1C1loge(3/VBAT), as Table 1 shows. With battery voltages as low as 1.5V, instead use a bipolar transistor with a low saturation voltage as well as a modified circuit scheme.

Editor’s note: With no feedback for rapid shutoff, as C1 slowly discharges below 3V, Q1 goes through a period of gradually increasing the on-resistance, which temporarily increases its power dissipation and heating during the shutoff action. Be sure to consider this effect, size Q1 adequately for the load current, and use adequately sized heat sinks.


References
  1. Baddi, Raju, “CMOS gate makeslong-duration timers using RC components,” EDN, March 1, 2012, pg 43.
  2. Chenier, Glen, “RC-timed shutofffunction uses op amp and momentaryswitch,” EDN, Feb 16, 2012, pg 45.
  3. Espí, José M; Rafael García-Gil; and Jaime Castelló, “Circuit extendsbattery life,” EDN, July 29, 2010, pg 42.
  4. Xia, Yongping, “Battery automaticpower-off has simpler design,” EDN, March 31, 2005, pg 80.
  5. Gimenez, Miguel, “Schemeprovides automatic power-off for batteries,” EDN, May 13, 2004, pg 92.
  6. Xia, Yongping, “Timer automaticallyshuts off,” EDN, Aug 17, 2000, pg 128.
  7. Elias, Kamil, “Timer provides poweroff function,” EDN, May 22, 1997, http://bit.ly/MlbQxg.
  8. Si4435BDY P-Channel 30-V (D-S)MOSFET,” Vishay Siliconix, May 4, 2009.




Videobub

7/31/2012 2:06 PM EDT

This is a great way to burn up the FET. Most logic level power MOSFETs are not designed to run linear, and may have serious SOA problems.

Sign in to Reply



Vladimir Doubovis

8/26/2012 10:37 PM EDT

Actually comments about a slow capacitor discharge time and MOSFETdamage are correct.
The approach is not great and is not reliable.

Sign in to Reply



Please sign in to post comment

Navigate to related information

Datasheets.com Parts Search

185 million searchable parts
(please enter a part number or hit search to begin)