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4 Views of the Silicon Roadmap

Choosing resists and transistors
5/19/2017 10:51 AM EDT
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resistion
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Shot noise
resistion   5/29/2017 9:56:57 PM
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The doses here of ~30-40 mJ/cm2 are still too low, need something like 60-80 mJ/cm2, to address shot noise. 

https://www.jstage.jst.go.jp/article/photopolymer/29/6/29_797/_pdf

Also, the dose of 20 mJ/cm2 is assumed for ASML's throughput targets and corresponding source power, so they are already behind, and falling further behind with scaling.

resistion
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T2T
resistion   5/29/2017 9:49:13 PM
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The gap resolution between line end tips is an issue for EUV. Again the illumination doesn't match this part of the pattern very well.

resistion
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Re: Illuminating
resistion   5/21/2017 6:59:00 PM
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On your p. 2 figure, the two cases on the right for 36 and 38 nm pitch show different distributions of illumination points in the dark circle, and these are different still from 32 nm and (more extremely) 26 nm (the placement there also looks incorrect, for horizontal lines). These distributions came about through source-mask optimization (SMO). My understanding now is that EUV patterns shift when the wafer topography is higher or lower, and this is quite sensitive to pitch.

rick merritt
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Re: Already too small
rick merritt   5/21/2017 6:02:25 PM
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@resition: Yes, as i understand it a feature at 14A might be made up of the equivalent of 3-5 atoms which is crazy to think about.

rick merritt
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Re: Illuminating
rick merritt   5/21/2017 6:01:00 PM
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@resistion: I'm not sure I understand your comment. Can you clairify it?

 

traneus
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Shift from analog to digital imaging
traneus   5/21/2017 10:48:38 AM
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resistion wrote that the silicon lattice constant is 0.54  nm.  As feature sizes shrink, the analog idea of patterning onto continuous silicon breaks down. Instead, we are talking about a digital pixellated lattice of individual atoms, and the patterning process will be addressing individual atoms.

resistion
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Illuminating
resistion   5/19/2017 8:48:21 PM
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The EUV illumination is changing dramatically for small changes of pitches, that's a fundamental difficulty.

resistion
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Already too small
resistion   5/19/2017 8:32:48 PM
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The silicon lattice constant is 0.54 nm. This already makes 10% CD control impossible for 10-11 nm features, and so at ~20 nm CD it is already very difficult. IMEC projecting further into an era of nonsense fueled by EUV and nanowires.

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