The new family of infrared (IR) emitters from Siemens Microelectronics Inc., Cupertino, Calif., is suited for high-speed data communications and applications requiring upward of 25 mW with low dropoff of output power over time.
Based on Siemens' metal organic vapor-phase epitaxy (MOVPE) process and developed to deliver high-brightness LEDs, the InGaAlAs emitters (the SHF4590/4595 part is in the 880-nm region) are fast, typically switching in 10 ns, against 500 to 600 ns for conventional devices.
With transmission rates to 100 Mbaud, the emitters can be used in multimedia products, IR keyboards, joysticks, analog and digital hi-fi audio and video gear, and battery-powered equipment. The high-power emitters are available in sampling quantities in nine configurations: SFH4290, SFH4295, SFH4391, SFH4591, SFH4592, SFH4590, SFH4595, SFH495P, and SFH4552.
Pricing for production volumes will be 53 cents in lots of 10,000.