CHANDLER, Ariz. -- RF Micro Devices Inc. today opened a new engineering design center here, a 6,000-sq.-ft. facility that will be used to develop RF ICs= for wireless communications applications.
The Greensboro, N.C.-based company said the center is staffed with senior design engineers and technicians developing high-efficiency linear power amplifiers, Bluetooth circuits, and other RF ICs used in cellular and PCS telephones. The design center will feature engineering offices, fully equipped labs, and CAD equipment. Designs will be manufactured using GaAs HBT (gallium arsenide heterojunction bipolar transistor), Si, and SiGe (silicon germanium) technologies.
"The additional design capacity is critical for us to serve our growing customer base, and provides an opportunity for RFMD to capture even more design wins," said David A. Norbury, RF Micro's president and CEO. "Our customers require that we continually develop sophisticated applications in a variety of technologies -- GaAs HBT, silicon bipolar and BiCMOS, silicon germanium and GaAs MESFET -- and this design center offers the ability to continue to do so."
The new facility marks the fourth design center created by RF Micro Devices. In 1999, the company opened facilities in Scotts Valley, Calif.; Cedar Rapids, Iowa; and Boston.