Infineon Technologies AG today introduced its silicon germanium BiCMOS technology to support high-speed, low-power IC designs for next-generation mobile communications.
The Munich-based chipmaker also said it has implemented a 10-GHz phase-locked-loop (PLL) circuit using the B7HFc process.
At 10 GHz, Infineon's SiGe BiCMOS PLL is a RF benchmark in high speed, low power and integration, Infineon claimed. At typical operating frequencies for mobile phones, the PLL offers the benefit of improved RF performance while reducing supply current by 50% compared to conventional silicon BiCMOS designs, according to Maurice van Riek, vice president and general manager of the radio frequency ICs business unit at Infineon.
"Highly integrated low-power RF transceivers can now be realized with the B7HFc technology, resulting in extended talk time and standby time for portable applications," van Riek said.
"By addressing the specific requirements of higher operating frequencies, reduced power consumption and increased levels of integration, our SiGe BiCMOS technology provides an ideal basis for future mobile communication and wireless internet standards such as 2.5G, 3G, and HiperLAN."
The B7HFc technology was designed specifically to meet requirements of mobile communication systems and high-speed data transmission standards. The process combines state-of-the-art RF bipolar transistors with transit frequencies up to 75 GHz, and an advanced analog 0.35-micron CMOS process.
Infineon said the new SiGe BiCMOS process will enable innovative solutions for analog, mixed-signal and high-level integrated RF products, such as low-noise amplifiers (with minimum noise figures of 0.65 dB at 1.8 GHz), mixers, PLLs (up to 10 GHz), transceivers and analog-to-digital converters.