Agilent Technologies Inc. today announced a power-semiconductor process for wireless applications that it said will improve both performance and battery life in RF transistors and power-amplifier modules.
The significant improvement in efficiency of Agilent's new Enhancement-mode pseudomorphic (E-pHEMT ) process will improve CDMA mobile phone battery life by up to 15%, or allow for smaller batteries, which will make room for new features, according to the Palo Alto, Calif., company.
"Major handset manufacturers have shown strong interest in ourE-pHEMT technology, and we are in active discussions with them today," said Dave Allen, vice president and general manager of Agilent's Wireless Semiconductor Division. "We are now transferring this process, developed at Agilent Laboratories, into the high-volume manufacturing environment."
The first product using this process will be a high-dynamic-range
transistor, scheduled for introduction in November. Agilent expects its E-pHEMT power amplifiers, currently under development, to offer higher performance than both current gallium arsenide (GaAs) heterojunction bipolar transistor (HBT) amplifiers and future products based on next-generation indium gallium phosphide (InGaP) HBT technology.
In the first quarter of 2001, Agilent plans to introduce E-pHEMT power modules into its CDMAdvantage RF chipset, which also includes space-saving film bulk acoustic resonator (FBAR) filtering products.
Agilent is also developing a series of amplifiers for the GSM standard, planned for introduction in the first quarter of 2001. Agilent expects that E-pHEMT performance will create rapid growth for the technology in GSM phone applications.