Microsemi Corp., Santa Ana, Calif., announced today that it has begun shipping its first gallium arsenide semiconductors, three months ahead of plan.
The company said it originally forecast it would not see revenue from its new compound semiconductor technology until June.
Initial orders are for the InGaAs/InP photodetectors Microsemi introduced in December of 2000. They will be used in Dense Wavelength Division Multiplexing (DWDM) optical transponder applications.
Microsemi's compound semiconductor product offering now includes InGaP HBT gain blocks and power amplifiers, InGaAs/InP and GaAs photodetectors, and SiC Schottky diodes.