Infineon Technologies AG and Micron Technology, Inc., today announced they signed an agreement to co-develop a new family of Reduced Latency DRAM (RLDRAM) for high-performance memory applications.
Incorporating input from networking industry vendors, these newmemory devices will initially operate at data rates as high as
600Mbit/sec/pin while reducing latency to a fraction of competing architectures, the companies said.
The internal memory architecture allows an ultra-fast random access and will thereby close the gap between DRAM and SRAM, the firms said. Infineon and Micron are aiming RLDRAM at switches, routers and other high-bandwidth latency-sensitive applications.
Infineon and Micron will work closely together ensuring multiple sources for the new RLDRAMs by developing pin- and function-compatible products, according to the companies.