SANTA CLARA, Calif. -- Intel Corp. Wednesday confirmed that it has filed permit applications to build a $2 billion development fab capable of 0.07-micron design rules in Hillsboro, Ore. The fab represents Intel's second 300-mm wafer plant at this site.
The move has been expected for weeks. Intel officials first hinted of plans to begin site work for a second 300-mm development fab during a press tour of its R&D operations in Hillsboro last month. As first reported by SBN, the planned D1D will be used to develop next-generation processes for 300-mm (12-inch) wafers (see May 14 story).
A spokesman today said if the permits are approved, minimal site preparation would be done this year. Construction of the D1D fab will begin in 2002, with completion slated for late in 2003. The schedule depends upon the market conditions, which Intel will evaluate later this year, the spokesman said.
Intel will likely install 157-nanometer wavelength lithography in the new fab to get to a 0.07-micron processing level. The fab will begin with a 0.10-micron capability and transition down to smaller line geometries.
The D1D development facility will supplement Intel'scurrent D1C fab at the site, which is developing 0.13-micron
processing on 300-mm wafers using 193-nm wavelength lithography. D1C will push development down to the 0.10-micron level, overlapping the startup of the next-generation D1D fab.
Because of the low level of preliminary site work needed for D1D, Intel said the fab will have little effect on the company's 2001 capital equipment plans, which are still set at $7.5 billion.